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Dislocations of ZnO single crystals examined by X-ray topography and photoluminescence

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Abstract

Dislocations generated by indentation and subsequent annealing at elevated temperatures up to 800 °C in high quality (0001) wafers of ZnO single crystals were investigated by transmission X-ray topography and photoluminescence. Damages induced by indentation in ZnO wafers were guessed to lead to dislocated regions from X-ray topographic images. PL intensities of 3.36 eV near-band edge peak and 2.4 eV deep emission band in ZnO decreased drastically, with increasing in annealing temperature up to 800 °C, irrespective of dislocated or non-dislocated regions. The development of a new emission band 2.8–3.0 eV was found in non-damaged ZnO through annealing at 700 and 800 °C, which suggests that dislocations suppress the development of the new peak.

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Acknowledgments

This work was performed under the inter-university cooperative Research program of the Institute for Materials Research, Tohoku University, Japan.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, University of Miyazaki, 1-1 Gakuen, Kibanadai-nishi, Miyazaki, 889-2192, Japan

    K. Yoshino

  2. Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama, 700-0005, Japan

    M. Yoneta

  3. Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan

    I. Yonenaga

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  1. K. Yoshino
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  2. M. Yoneta
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  3. I. Yonenaga
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Correspondence to K. Yoshino.

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Yoshino, K., Yoneta, M. & Yonenaga, I. Dislocations of ZnO single crystals examined by X-ray topography and photoluminescence. J Mater Sci: Mater Electron 19, 199–201 (2008). https://doi.org/10.1007/s10854-007-9332-3

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