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Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition

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Abstract

Negative photo-induced currents and negative differential characteristics of photoinduced current have been obtained successfully under weak photoexcitations at 300 K for a new optoelectronic sensor including a carrier-storage layer of InAs/GaAs short period superlattice. The phenomena are useful to imitate the selectivity functions in visual recognition, which is based on the difference-of-Gaussian functionlike distribution of light sensitivity in the receptive fields in visual cortex. The phenomena are strongly dependent on the material of the carrier-storage layer, where the photogenerated carriers are separated spatially due to the Schottky forward voltage. The carrier separation is more enhanced as the ratio of electron mobility to hole mobility becomes higher for the material of the carrier-storage layer. This means the In-rich InGaAs material is superior to the Ga-rich one. In addition, compared with In x Ga1-x As alloy, the improved surface morphology, the high electron mobility at room temperature and the narrow energy bandgap are observed in the case of InAs/GaAs short period superlattice. That is the InAs/GaAs short period superlattice is superior to In x Ga1-x As alloy as the material for the carrier-storage layer.

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Authors and Affiliations

  1. Collaborative Research Center, The University of Shiga Prefecture, Hikone-city, Shiga, Japan

    Y. Matsui & Y. Miyoshi

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  1. Y. Matsui
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  2. Y. Miyoshi
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Correspondence to Y. Matsui.

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Matsui, Y., Miyoshi, Y. Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition. J Mater Sci: Mater Electron 19, 125–130 (2008). https://doi.org/10.1007/s10854-007-9308-3

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