Skip to main content
SpringerLink
Log in

Dislocations at the interface between sapphire and GaN

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

GaN layers grown by metal organic vapour phase epitaxy on sapphire were imaged by synchrotron radiation X-ray topography. The threading dislocations could not be resolved in the topographs due to their high density, but a smaller density of about 105 cm−2 defects were seen in the interface between GaN and sapphire by utilizing large-area back-reflection topography for the sapphire substrates. The misfit dislocation images in the topographs form a well-resolved cellular network, in which the average cell size is roughly 30 μm. Different cell shapes in the misfit dislocation networks are observed on different samples. Also, images of small-angle grains of similar size were found in transmission section topographs of the GaN layers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

Similar content being viewed by others

References

  1. X.H. Wu, P. Fini, E.J. Tarsa, B. Heying, S. Keller, U.K. Mishra, S.P. DenBaars, J.S. Speck, J. Cryst. Growth 189/190, 231 (1998)

    Article  CAS  Google Scholar 

  2. T. Lang, M. Odnoblyudov, V. Bougrov, M. Sopanen, J. Cryst. Growth 277, 64 (2005)

    Article  CAS  Google Scholar 

  3. T. Tuomi, K. Naukkarinen, P. Rabe, Phys. Stat. Sol. (A) 25, 93 (1974)

    Article  CAS  Google Scholar 

  4. T. Tuomi, J. Synchrotron Radiation 9, 174 (2002)

    Article  CAS  Google Scholar 

  5. K. Shiojima, J. Vacuum Sci. & Tech. B: Microelectronics and Nanometer Structures 18, 37 (2000)

    Article  CAS  Google Scholar 

  6. P.J. McNally, T. Tuomi, D. Lowney, K. Jacobs, A.N. Danilewsky, R. Rantamäki, M. O’Hare, L. Considine, Phys. Stat. Sol. (A) 185, 373 (2001)

    Article  CAS  Google Scholar 

  7. W.M. Chen, P.J. McNally, K. Jacobs, T. Tuomi, A.N. Danilewsky, Z.R. Zytkiewicz, D. Lowney, J. Kanatharana, L. Knuuttila, J. Riikonen, J. Cryst. Growth 243, 94 (2002)

    Article  CAS  Google Scholar 

  8. T. Lang, M. Odnoblyudov, V. Bougrov, S. Suihkonen, M. Sopanen, H. Lipsanen, J. Cryst. Growth 292, 26 (2006)

    Article  CAS  Google Scholar 

  9. S. Kaiser, H. Preis, W. Gebhardt, O. Ambacher, H. Angerer, M. Stutzmann, A. Rosenauer, D. Gerthsen, Jpn. J. Appl. Phys. 37, 84 (1998)

    Article  CAS  Google Scholar 

  10. J. Jasinski, Z. Liliental-Weber, J. El. Mat. 31, 429 (2002)

    Article  CAS  Google Scholar 

Download references

Acknowledgements

This work was supported by the European Community - Research Infrastructure Action under the FP6 "Structuring the European Research Area" Programme (through the Integrated Infrastructure Initiative "Integrating Activity on Synchrotron and Free Electron Laser Science".) M. Odnoblyudov and V. Bougrov acknowledge support by RFBR and Dynasty Foundation. Also, we would like to thank Dr. C. Paulmann for his assistance at HASYLAB beamline F1 Topography.

Author information

Authors and Affiliations

  1. Micro and Nanosciences Laboratory, Helsinki University of Technology (TKK), P.O. Box 3500, Espoo, 02015, Finland

    A. Lankinen, T. Lang, S. Suihkonen, O. Svensk, A. Säynätjoki & T. O. Tuomi

  2. Research Institute for Networks and Communications Engineering, Dublin City University, Dublin 9, Ireland

    P. J. McNally

  3. OptoGaN Oy, Tietotie 3, Espoo, 02150, Finland

    M. Odnoblyudov & V. Bougrov

  4. A. F. Ioffe Physico-Technical Institute, St. Petersburg, 194021, Russian Federation

    M. Odnoblyudov & V. Bougrov

  5. Kristallographisches Institut, University of Freiburg, Freiburg, 79104, Germany

    A. N. Danilewsky

  6. Linköping University, 58183, Linkoping, Sweden

    P. Bergman

  7. ANKA, Institute for Synchrotron Radiation, Karlsruhe, Germany

    R. Simon

Authors
  1. A. Lankinen
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. Lang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. Suihkonen
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. O. Svensk
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. Säynätjoki
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. T. O. Tuomi
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. P. J. McNally
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. M. Odnoblyudov
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. V. Bougrov
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. A. N. Danilewsky
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. P. Bergman
    View author publications

    You can also search for this author in PubMed Google Scholar

  12. R. Simon
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. Lankinen.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Lankinen, A., Lang, T., Suihkonen, S. et al. Dislocations at the interface between sapphire and GaN. J Mater Sci: Mater Electron 19, 143–148 (2008). https://doi.org/10.1007/s10854-007-9307-4

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-007-9307-4

Keywords

Search

Navigation