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In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs

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Abstract

In order to investigate the possibilities of in-situ monitoring of GaAsN bulk layer growth and the crystal quality concerning the formation of misfit dislocations, GaAsN bulk samples with different layer thicknesses were grown using a metal-organic vapor phase epitaxy system equipped with a normal incidence optical reflectance setup. High-resolution X-ray diffractometry and synchrotron radiation X-ray topography were used to characterize the samples after growth. Combining the results from topography images and in-situ reflectance data, the formation of the misfit dislocations can be roughly identified from the reflectance curves and thus observed during growth.

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References

  1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, Jpn. J. Appl. Phys. 35, 1273–1275 (1996)

    Article  CAS  Google Scholar 

  2. J. Toivonen, T. Tuomi, J. Riikonen, L. Knuuttila, T. Hakkarainen, M. Sopanen, H. Lipsanen, P.J. McNally, W. Chen, D. Lowney, J. Mat. Sci. Mat. El. 14, 267–270 (2003)

    Article  CAS  Google Scholar 

  3. H. Hardtdegen, N. Kaluza, R. Schmidt, R. Steins, E.V. Yakovlev, R.A. Talalaev, Yu.N. Makarov, J.-T. Zettler, phys. stat. sol. a 201, 312–319 (2004)

    Article  CAS  Google Scholar 

  4. A. Rebey, M.M. Habchi, A. Bchetnia, B. El Jani, J. Cryst. Growth 261, 450–457 (2004)

    Article  CAS  Google Scholar 

  5. T. Tuomi, K. Naukkarinen, P. Rabe, phys. stat. sol. a 25, 93–106 (1974)

    Article  CAS  Google Scholar 

  6. M.A.G. Halliwell, M.H. Lyons, M.J. Hill, J. Cryst. Growth 68, 523–531 (1984)

    Article  Google Scholar 

  7. O. Reentilä, M. Mattila, M. Sopanen, H. Lipsanen, J. Appl. Phys. 101, 033533 (2007)

    Article  Google Scholar 

  8. S. Hasenöhrl, R. Kúdela, J. Novák, T.O. Tuomi, L. Knuuttila, Materials Science and Engineering B 88, 134–138 (2002)

    Article  Google Scholar 

  9. O. Madelung (eds.), Data in Science and Technology, Semiconductors Group IV Elements and III–V Compounds (Springer, Berlin 1991)

    Google Scholar 

  10. K. Volz, O. Rubel, T. Torunski, S.D. Baranovskii, W. Stolz, Appl. Phys. Lett. 88, 081910 (2006)

    Article  Google Scholar 

  11. J.W. Matthews, A.E. Blakeslee, J. Cryst. Growth 27, 118–125 (1974)

    CAS  Google Scholar 

  12. D.J. Paul, Semicond. Sci. Technol. 19, R75–R108 (2004)

    Article  CAS  Google Scholar 

  13. B.F. Usher, D. Zhou, S.C. Goh, T. Warminski and X.P. Huang, Optoelectronic and Microelectronic Materials and Devices, 1998. Proceedings 290–293 (1999)

  14. D.J. Eaglesham, D.M. Maher, E.P. Kvam, J.C. Bean, C.J. Humphreys, Phys. Rev. Lett. 62, 187–190 (1989)

    Article  CAS  Google Scholar 

  15. Y.H. Lo, Appl. Phys. Lett. 59, 2311–2313 (1991)

    Article  CAS  Google Scholar 

  16. J. Narayan, S. Oktyabrsky, J. Appl. Phys. 92, 7122–7127 (2002)

    Article  CAS  Google Scholar 

  17. M. Reason, X. Weng, W. Ye, D. Dettling, S. Hanson, G. Obeidi, R.S. Goldman, J. Appl. Phys. 97, 103523 (2005)

    Article  Google Scholar 

Download references

Acknowledgements

This work was supported by the European Community - Research Infrastructure Action under the FP6 “Structuring the European Research Area” Programme (through the Integrated Infrastructure Initiative “Integrating Activity on Synchrotron and Free Electron Laser Science”.)

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Authors and Affiliations

  1. Micro and Nanosciences Laboratory, Helsinki University of Technology, P.O. Box 3500, Micronova, Espoo, 02015 TKK, Finland

    O. Reentilä, A. Lankinen, M. Mattila, A. Säynätjoki, T. O. Tuomi & H. Lipsanen

  2. Research Institute for Networks and Communications Engineering (RINCE), Dublin City University, Dublin 9, Ireland

    L. O’Reilly & P. J. McNally

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  1. O. Reentilä
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  2. A. Lankinen
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  3. M. Mattila
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  4. A. Säynätjoki
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  5. T. O. Tuomi
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  6. H. Lipsanen
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  7. L. O’Reilly
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  8. P. J. McNally
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Correspondence to O. Reentilä.

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Reentilä, O., Lankinen, A., Mattila, M. et al. In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs. J Mater Sci: Mater Electron 19, 137–142 (2008). https://doi.org/10.1007/s10854-007-9306-5

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  • DOI: https://doi.org/10.1007/s10854-007-9306-5

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