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Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation

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Abstract

The electric characteristics of proton and electron irradiated Light emitting diodes are investigated. The reverse current increased proportional with the proton fluence, while the capacitance decreased for increasing irradiation. DLTS measurements revealed the DX center and the spectrum grows for higher irradiation fluence. For electron irradiations, the shape of the I/V and C/V characteristic did not changed, although for higher irradiation fluence rates, the reverse current increased and the capacitance decreased.

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Authors and Affiliations

  1. Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto, 861-1102, Japan

    H. Ohyama, H. Shitogiden, K. Takakura & K. Shigaki

  2. JAXA, 2-1-1, Sengen, Ibaraki, 305-8505, Japan

    S. Kuboyama & C. Kamesawa

  3. IMEC, Kapeldreef 75, Leuven, 3001, Belgium

    E. Simoen

  4. E.E. Department, KU Leuven, Leuven, 3001, Belgium

    C. Claeys

Authors
  1. H. Ohyama
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  2. H. Shitogiden
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  3. K. Takakura
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  4. K. Shigaki
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  5. S. Kuboyama
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  6. C. Kamesawa
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  7. E. Simoen
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  8. C. Claeys
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Correspondence to H. Ohyama.

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Ohyama, H., Shitogiden, H., Takakura, K. et al. Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation. J Mater Sci: Mater Electron 19, 171–173 (2008). https://doi.org/10.1007/s10854-007-9302-9

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  • DOI: https://doi.org/10.1007/s10854-007-9302-9

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