Skip to main content
SpringerLink
Log in

High temperature assessment of nitride-based devices

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

The high temperature characterization of GaN-based devices, including high electron mobility transistors (HEMTs), p-i-n photodiodes and surface acoustic wave (SAW) filters is reported. Transmission line method (TLM) measurements reveal the reversible behaviour of both the ohmic contact resistance and the two-dimensional electron gas (2DEG) mobility. AlGaN/GaN HEMTs on sapphire and SiC substrates present a reduction of the drain current and the transconductance as temperature increases. The responsivity of InGaN/GaN photodiodes is enhanced and shifted to larger wavelengths with temperature, recovering its original value after the thermal cycle. The temperature coefficient of frequency of SAW filters on AlN epilayers on different substrates has been measured. The influence of temperature on the different surface acoustic modes is compared.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9

Similar content being viewed by others

References

  1. W.S. Tan, M.J. Uren, P.W. Fry, P.A. Houston, R.S. Balmer, T. Martin, Solid-State Electron. 50, 511 (2006)

    Article  CAS  Google Scholar 

  2. S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, Appl. Phys. Lett. 80, 2186 (2002)

    Article  CAS  Google Scholar 

  3. G. Bu, D. Ciplys, M. Shur, L.J. Schowalter, S. Schujman, R. Gaska, Electron. Lett. 39, 755 (2003)

    Article  CAS  Google Scholar 

  4. Y. Takagaki, P.V. Santos, E. Wiebicke, O. Brandt, H.-P. Schönherr, K.H. Ploog, Phys. Rev. B 66, 155439 (2002)

    Article  Google Scholar 

  5. M.-A. Dubois, P. Muralt, Appl. Phys. Lett. 74, 3032 (1999)

    Article  CAS  Google Scholar 

Download references

Acknowledgements

The authors wish to thank J. Grandal for the growth of the AlN/Si(111) samples and J. Grajal for the RF calibration kit. This work has been partially supported by the European Pr. KORRIGAN and the Spanish Pr. TEC2004-05698-C02-01/MIC.

Author information

Authors and Affiliations

  1. Instituto de Sistemas Optoelectrónicos y Microtecnología and Dpto. Ingeniería Electrónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid, 28040, Madrid, Spain

    R. Cuerdo, J. Pedrós, A. Navarro, A. F. Braña, J. L. Pau, E. Muñoz & F. Calle

Authors
  1. R. Cuerdo
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. J. Pedrós
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. Navarro
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. F. Braña
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. J. L. Pau
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. E. Muñoz
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. F. Calle
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to R. Cuerdo.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Cuerdo, R., Pedrós, J., Navarro, A. et al. High temperature assessment of nitride-based devices. J Mater Sci: Mater Electron 19, 189–193 (2008). https://doi.org/10.1007/s10854-007-9298-1

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-007-9298-1

Keywords

Search

Navigation