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Deposition of luminescent a-SiN x :H Films with SiH4–N2 gas mixture by VHF–PECVD using novel impedance matching method

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Abstract

Hydrogenated amorphous silicon nitride (a-SiN x :H) films are produced from a SiH4–N2 gas mixture by plasma enhanced chemical vapor deposition (PECVD) system with a newly developed impedance matching method at frequencies 13.6–150 MHz. An increase in the rf power from 35 to 350 mW/cm2 at the highest frequency of 150 MHz increases the optical bandgap (E opt) from 2.0 to 4.5 eV. Optical emission spectroscopy (OES) of the SiH4–N2 plasma shows that the emission intensity of SiH* (414 nm) is almost proportional to deposition rate. Films of a-SiN x :H deposited at 150 MHz and 210 mW/cm2 has an optical bandgap of E opt ≈ 4.1 eV and emits visible photoluminescence (PL) at room temperature (RT).

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Acknowledgments

This work is partially supported by the Nippon Sheet Glass Foundation for materials science and engineering and by the Japan Private School Promotion Foundation.

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Authors and Affiliations

  1. Department of Electronics and Computer Engineering, Joint Research Center of High-technology, Center for Hyper Media Research, Tokyo Polytechnic University, Atsugi, 243-0297, Japan

    S. Kobayashi

  2. Department of Electronics and Computer Engineering, Joint Research Center of High-technology, Tokyo Polytechnic University, Atsugi, 243-0297, Japan

    N. Ohrui, Y. C. Chao & T. Aoki

  3. A.S.K Corporation, Tokyo, 130-0002, Japan

    H. Kobayashi & T. Asakawa

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  1. S. Kobayashi
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  2. N. Ohrui
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  3. Y. C. Chao
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  4. T. Aoki
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  5. H. Kobayashi
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  6. T. Asakawa
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Correspondence to S. Kobayashi.

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Kobayashi, S., Ohrui, N., Chao, Y.C. et al. Deposition of luminescent a-SiN x :H Films with SiH4–N2 gas mixture by VHF–PECVD using novel impedance matching method. J Mater Sci: Mater Electron 18 (Suppl 1), 29–32 (2007). https://doi.org/10.1007/s10854-007-9181-0

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  • DOI: https://doi.org/10.1007/s10854-007-9181-0

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