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Aluminum doped ZnO by reactive sputtering of coaxial Zn and Al metallic targets

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Abstract

Transparent films of aluminum doped zinc oxide were obtained by reactive sputtering employing metallic zinc and aluminum targets. The targets were coaxially superposed in a single magnetron, by using a center hollow aluminum plate. Two different hole radii in the aluminum target were employed trying to modify the aluminum content. Sputtering power was kept constant at 50 W and temperature was set to 300, 400 and 500 °C. Oxygen partial pressure was 20 and 40% in argon. Film transparencies up to 85% were obtained using this method. X-ray diffraction and Raman spectroscopy measurements were performed to monitor the crystalline structure of the films. Sample resistance was determined by current voltage measurements.

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Acknowledgements

Authors gratefully thank R. Fregoso, M. Guerrero, Ana B. Soto and F. Melgarejo for technical assistance. As well as partial financial support by CONACyT (México). One of the authors (MASA) gratefully thanks CONACyT for financial support through program Retención.

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Correspondence to M. A. Santana-Aranda.

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Santana-Aranda, M.A., Armenta-Estrada, A., Mendoza-Barrera, C. et al. Aluminum doped ZnO by reactive sputtering of coaxial Zn and Al metallic targets. J Mater Sci: Mater Electron 18, 611–614 (2007). https://doi.org/10.1007/s10854-006-9115-2

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  • DOI: https://doi.org/10.1007/s10854-006-9115-2

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