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Deposition of nanocrystalline ZnO thin films on p-Si by novel galvanic method and application of the heterojunction as methane sensor

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Abstract

Undoped nanocrystalline n-ZnO thin films were deposited by a novel galvanic technique at room temperature on p-Si 〈100 〉 substrates to fabricate ZnO–Si heterojunctions. The I–V characteristics were studied at different temperatures with two different metallic contacts e.g., gold and palladium–silver (26%), in air and in presence of different concentrations (0.1, 0.5 and 1%) of methane gas. A shift in I–V characteristics in presence of methane was observed. The sensitivity and response time were studied at different temperatures (30 through 350 °C). Pd–Ag (26%) catalytic contacts showed much improved sensor performance.

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Acknowledgements

One of the authors (P. Bhattacharyya) gratefully acknowledges the CSIR, India, for a Senior Research Fellowship (SRF). Another author (N. Mukherjee) gratefully acknowledges the AICTE, India, for a Junior Research Fellowship (JRF). The work has been carried out under the research project sponsored by DST, Govt. of India.

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Authors and Affiliations

  1. IC Design and Fabrication Center, Department of Electronics and Telecommunication Engg, Jadavpur University, Kolkata, 700032, India

    P. Bhattacharyya, P. K. Basu, H. Saha & S. Basu

  2. Department of Chemistry, Bengal Engineering and Science University, Shibpur, Howrah, 71103, India

    N. Mukherjee & A. Mondal

Authors
  1. P. Bhattacharyya
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  2. P. K. Basu
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  3. N. Mukherjee
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  4. A. Mondal
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  5. H. Saha
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  6. S. Basu
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Correspondence to S. Basu.

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Bhattacharyya, P., Basu, P., Mukherjee, N. et al. Deposition of nanocrystalline ZnO thin films on p-Si by novel galvanic method and application of the heterojunction as methane sensor. J Mater Sci: Mater Electron 18, 823–829 (2007). https://doi.org/10.1007/s10854-006-9105-4

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  • DOI: https://doi.org/10.1007/s10854-006-9105-4

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