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Ni implantation-induced enhancement of the crystallisation of amorphous Si

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Abstract

We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi2 precipitates are formed in the Si–Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si–Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm2, while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm2. Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Korea University, Seoul, 136-713, Korea

    Young-Woo Ok & Tae-Yeon Seong

  2. Future Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon, 305-350, Korea

    Chel-Jong Choi

  3. Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA, 90095-1595, USA

    K. N. Tu

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  1. Young-Woo Ok
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  2. Tae-Yeon Seong
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  3. Chel-Jong Choi
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  4. K. N. Tu
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Correspondence to Tae-Yeon Seong.

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Ok, YW., Seong, TY., Choi, CJ. et al. Ni implantation-induced enhancement of the crystallisation of amorphous Si. J Mater Sci: Mater Electron 17, 979–985 (2006). https://doi.org/10.1007/s10854-006-9035-1

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  • DOI: https://doi.org/10.1007/s10854-006-9035-1

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