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Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN

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Abstract

The electrical properties of ruthenium (Ru) and ruthenium/gold (Ru/Au) Schottky contacts on n-type GaN are investigated as a function of annealing temperature by current–voltage (I–V) and capacitance–voltage (C–V) techniques. The Schottky barrier height of as-deposited Ru/n-GaN is found to be 0.88 eV (I–V) and 1.10 eV (C–V) respectively. However, after annealing at 500°C for 1 min in the nitrogen ambient, the decrease in barrier height is quite considerable and found to be 0.80 eV (I–V) and 0.86 eV (C–V). In the case of Ru/Au Schottky diode the measured barrier height is 0.75 eV (I–V) and 0.93 eV (C–V). In contrast to the Ru contacts, it is interesting to note that the barrier height of Ru/Au depends on the annealing temperature. Annealing at 300°C improves the barrier height and the corresponding values are 0.99 and 1.34 eV. Further increase in annealing temperature decreases the barrier height and the respective values are 0.72 and 1.08 eV at 500°C. From the above observations, it is clear that the electrical properties of annealed Ru/Au contacts are improved compared to the as-deposited films. However, Ru Schottky contacts exhibit a kind of thermal stability during annealing.

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References

  1. J.K. Sheu, Y.K. Su, G.C. Chi, M.J. Jou, C.M. Chang, Appl. Phys. Lett. 72, 3317 (1998)

    Article  CAS  Google Scholar 

  2. F.D. Auret, S.D. Goodman, F.K. Koschnick, J.M. Spaeth, B. Beaumont, P. Gibart, Appl. Phys. Lett. 74, 2173 (1999)

    Article  CAS  Google Scholar 

  3. Y.K. Su, F.S. Juang, M.-H. Chen, Jpn. J. Appl. Phys. Part 1 42, 2257 (2003)

    Article  Google Scholar 

  4. H. Amano, M. Kito, X. Hiramatsu, I. Akasaki, Jpn. J. Appl. Phys. 28, L2112 (1998)

    Article  Google Scholar 

  5. H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Serdlov, M. Burns, J. Appl. Phys. 76, 1363 (1994)

    Article  CAS  Google Scholar 

  6. H.J. Wang, L. He, J. Electron. Mater. 27, 1272 (1998)

    CAS  Google Scholar 

  7. K. Wang, R.X. Wang, S. Fung, C.D. Beling, X.D. Chen, Y. Huang, S. Li, S.J. Xu, M. Gong, Mater. Sci. Eng. B 117, 21 (2005)

    Article  Google Scholar 

  8. J.D. Guo, F.M. Pan, M.S. Feng, R.J. Guo, P.F. Chou, C.Y. Chang, J. Appl. Phys. 80(3), 1623 (1996)

    Article  Google Scholar 

  9. N. Miura, T. Nanjo, M. Suita, T. Oishi, Y. Abe, T. Ozeki, H. Ishikawa, T. Egawa, T. Jimbo, Solid-State Electron 48, 689 (2004)

    Article  CAS  Google Scholar 

  10. R. Mehandru, S. Kang, S. Kim, F. Ren, I. Kravchenko, W. Lewis, S.J. Pearton, Mater. Sci. Semicon. Proc. 7, 95 (2004)

    Article  CAS  Google Scholar 

  11. F.D. Auret, S.A. Goodman, G. Myburg, F.K. Koschnick, J.M. Spaeth, B. Beaumont, P. Gibart, Physica B 84–87, 273 (1999)

    Google Scholar 

  12. C.K. Ramesh, V. Rajagopal reddy, Chel-Jong Choi, Mater. Sci. Eng. B 112, 30 (2004)

    Article  Google Scholar 

  13. E.H. Rhoderick, T.H. Williams (eds.), Metal-Semiconductor Contacts. Oxford Science, Oxford, 1988

    Google Scholar 

  14. M. Drechsler, D.M. Hofman, B.K. Meyer, T. Detchprohm, H. Amano, I. Akasaki, Jpn. J. Appl. Phys. 34, L1178 (1995)

    Article  CAS  Google Scholar 

  15. D.T. Quan, H. Hbib, Solid-State Electron 36, 339 (1993)

    Article  Google Scholar 

  16. S.C. Binari, H.B. Dietrich, G. Kelner, L.B. Rowland, K. Doverspike, D.K. Gaskill, Electron. Lett. 30, 909 (1994)

    Article  Google Scholar 

  17. J.D. Guo, M.S. Feng, R.J. Guo, F.M. Pan, C.Y. Chang, Appl. Phys. Lett. 67, 2657 (1995)

    Article  Google Scholar 

  18. L. Wang, M.I. Nathan, T.–H. Lim, M.A. Khan, Q. Chen, Appl. Phys. Lett. 68, 1267 (1996)

    Article  Google Scholar 

  19. A.T. Ping, A.C. Schmitz, M.A. Khan, I. Aldesida, Electron. Lett. 32, 68 (1996)

    Article  Google Scholar 

  20. E.V. Kalinina, N.J. Kurnetsov, V.A. Dmitriev, K.G. Irvine, C.H. Carter, J. Electron. Mater. 25, 831 (1996)

    Google Scholar 

  21. S.M. Sze, Physics of Semiconductor Devices. (Wiley, New York, 1981)

    Google Scholar 

  22. Yuanping Sun, X.M. Shen, J. Wang, D.G. Zhao, G. Feng, Y. Fu, S.M. Zhang, Z.H. Zhang, Z.H. Feng, Y.X. Bai, Hui Yang, J. Phys. D 35, 2648 (2002)

    Article  Google Scholar 

  23. W.E. Spicer, I. Lindau, P. Skeath, C.Y. Su, P. Chye, Phys. Rev. Lett. 44, 420 (1980)

    Article  Google Scholar 

  24. R.H. Williams, V. Montgomery, R.R. Varma, J. Phys. C 11, L735 (1978)

    Article  Google Scholar 

  25. M.T. Hirsen, K.J. Duxstand, E.E. Haller, Electron. Lett. 33, 95 (1997)

    Article  Google Scholar 

  26. J.Y. Duboz, F. Binet, N. Laurent, E. Rosencher, F. Scholz, V. Harle, O. Briot, B. Gil, R.L. Autombard, Mater. Res. Soc. Symp. Proc. 449, 1085 (1996)

    Google Scholar 

  27. D.K. Schroder (ed.), Semiconductor Material and Device Characterization (Wiley, New York, 1990)

    Google Scholar 

  28. M.S. Tyagi, Metal Semiconductor Schottky barrier Junctions and their Applications (Plenum Press, New York, 1994)

    Google Scholar 

  29. J.H. Werner, H.H. Guttler, J. Appl. Phys. 69, 1522 (1991)

    Article  Google Scholar 

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Acknowledgement

The authors thank the Department of Science and Technology (DST), Government of India, New Delhi for providing the financial assistance (Grant No. SR/S2/CMP-51/2003).

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Authors and Affiliations

  1. Department of Electronics, University of Mysore, Post-Graduate Centre, Hemagangotri, 573 220, Hassan, India

    C. K. Ramesh & V. Rajagopal Reddy

  2. Department of Physics, Indian Institute of Science, Bangalore, 560 012, India

    K. S. R. Koteswara Rao

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  1. C. K. Ramesh
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  2. V. Rajagopal Reddy
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  3. K. S. R. Koteswara Rao
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Correspondence to V. Rajagopal Reddy.

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Ramesh, C., Reddy, V. & Rao, K. Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN. J Mater Sci: Mater Electron 17, 999–1004 (2006). https://doi.org/10.1007/s10854-006-9001-y

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