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Fatigue behavior of SrBi2(Ta, Nb)2O9 ferroelectric thin films fabricated by pulsed laser deposition

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Abstract

The fatigue behavior for SBTN thin film capacitors with platinum electrodes (Pt/SBTN/Pt) on silicon wafers was investigated. Excellent electrical fatigue resistance was observed; the P r during 1010 switching cycles did not display significant reduction. Optical fatigue becomes significant, however, with increasing illumination time to 50 s, the remanent polarization of the thin films shows about 78% reduction from its primary value. The optically induced polarization fatigue in SBTN films is due to trapping of photo-generated charge carriers at domain boundaries, resulting in polarization suppression. These results are helpful in understanding the fatigue-free response observed in electrical field, and are also necessary to fully characterize SBTN for memory applications.

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  1. College of Information Science and Technology, East China Normal University, 3663 Zhongshan North Road, Shanghai, 200062, China

    Pingxiong Yang

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  1. Pingxiong Yang
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Yang, P. Fatigue behavior of SrBi2(Ta, Nb)2O9 ferroelectric thin films fabricated by pulsed laser deposition. J Mater Sci: Mater Electron 17, 925–929 (2006). https://doi.org/10.1007/s10854-006-0045-9

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  • DOI: https://doi.org/10.1007/s10854-006-0045-9

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