Skip to main content
SpringerLink
Log in

Effects of high temperature electron irradiation on trench-IGBT

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

The degradation of the electrical properties of IGBTs (Insulated-Gate Bipolar Transistors) by 2-MeV electron irradiation at high-temperatures was studied. The irradiation temperatures were 25, 100, 200 and 300∘C, and the fluence was fixed at 1015 e/cm2. For most experimental conditions, the threshold voltage (VTH) is observed to recover partially during 100∘C and the saturation voltage (VCEsat) increase is most pronounced at 100∘C. It is shown that in this irradiation temperature range, the temperature dependency of the voltage shift due to the radiation-induced interface traps (Δ Vit) and the voltage shift due to the radiation-induced oxide traps (Δ Vot) are different, which suggests a possible degradation mechanism for these phenomena. It is tentatively suggested that the diffusion of hydrogen released from the gate by the 2-MeV electrons passivates the interface traps during the high temperature irradiation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. B. J. Baliga, in “Modern Power Devices” (Wiley, New York, 1987) p. 52.

    Google Scholar 

  2. S. Brotherton and P. Bradley, J. Appl. Phys. 53 (1992) 5720.

    Article  Google Scholar 

  3. D. Bielle-Daspet, Solid-State Electron. 16 (1973) 1103.

    Article  Google Scholar 

  4. A. O. Evwaraye and B. J. Baliga, J. Electrochem. Soc. 124 (1977) 913.

    Google Scholar 

  5. Y. Konishi, Y. Onishi, S. Momota and K. Sakurai, Proc. of ISPSD’96 23–26 (1996) 335.

    Google Scholar 

  6. K. Mochizuki, K. Ishii, M. Takeda, H. Hagino and T. Yamada, Proc. of ISPSD’97 26–29 (1997) 237.

    Google Scholar 

  7. J. Vobecky and P. Hazdra, Proc. of ISPSD’96 23–26 (1996) 161.

    Google Scholar 

  8. M. Schmitt, H.-J. Schulze, A. SchlÖgl, M. VossebÜrger, A. Willmeroth, G. Deboy and G. Wachutka, Proc. of ISPSD’02 4–7 (2002) 229.

    Google Scholar 

  9. H. Ohyama, T. Hirao, E. Simoen, C. Claeys, M. Nakabayashi and S. Onoda, Solid State Phenomena 82–84 (2002) 465.

    Google Scholar 

  10. P. J. McWhorter and P. S. Winokur, Appl. Phys. Lett.. 48 (1986) 133.

    Article  Google Scholar 

  11. S. M. Sze, in “Physics of Semiconductor Devices” (New York, Wiley, 1981) p. 446.

    Google Scholar 

  12. M. S. C. Luo and C. T. Sa, J. Appl. Phys. 62 (1987) 4940.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo, 664-0005, Japan

    M. Nakabayashi

  2. Kumamoto National College of Technology, 2659-2 Suya Nishigoshi Kumamoto, 861-1102, Japan

    H. Ohyama, K. Takakura, T. Iwata, T. Kudou & M. Yoneoka

  3. Renesas Eastern Japan Semiconductor, Inc., 1-1, Nishiyokote, Takasaki, Gunma, 370-0021, Japan

    N. Hanano

  4. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    E. Simoen & C. Claeys

  5. E.E. Dept., KU Leuven, Kasteelpark Arenberg 10, B-3001, Leuven, Belgium

    C. Claeys

Authors
  1. M. Nakabayashi
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. H. Ohyama
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. N. Hanano
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. E. Simoen
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. C. Claeys
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. K. Takakura
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. T. Iwata
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. T. Kudou
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. M. Yoneoka
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Nakabayashi, M., Ohyama, H., Hanano, N. et al. Effects of high temperature electron irradiation on trench-IGBT. J Mater Sci: Mater Electron 16, 463–467 (2005). https://doi.org/10.1007/s10854-005-2319-z

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-005-2319-z

Keywords

Search

Navigation