Skip to main content
SpringerLink
Log in

Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

A new method for body potential estimation of ultra thin gate oxide fully-depleted silicon-on-insulator MOSFETs in accumulation mode operation is presented. The impact of the back gate voltage, gate length and drain voltage on the body potential is investigated. The magnitude of the Electron Valence Band gate tunneling-induced 2nd peak of the transconductance, characteristic of these ultra thin gate oxide FD SOI MOSFETs, is analyzed in terms of body potential changes and front gate characteristics shifts. Finally, a decrease of the body potential for strong accumulation back gate biases is revealed and discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. T. Skotnicki, G. Merckel and A. Merrachi, in IEDM Technical Digest (1989) p. 87.

  2. M. V. Fischetti and S. E. Laux, in IEDM Technical Digest (1995) p. 305.

  3. A. Mercha, J. M. RafÍi, E. Simoen, E. Augendre and C. Claeys, IEEE Trans. Electron Dev. 50(7) (2003) 1675.

    Article  Google Scholar 

  4. J. Pretet, T. Matsumoto, T. Poiroux, S. Cristoloveanu, R. Gwoziecki, C. Raynaud, A. Roveda and H. Brut, in Proc. of ESSDERC, Italy (2002) p. 515.

  5. K. Hayama, H. Ohyama, J. M. RafÍi, A. Mercha, E. Simoen and C. Claeys, “Linear Kink Effect” Induced Drain Current Hysteresis in Ultra Thin Gate Oxide FD-SOI n-MOSFETs, in: Proc. ULIS 2004, Leuven, Belgium, Ed. K. De Meyer and N. Collaert (2004) 59.

  6. J. P. Colinge, “Silicon-On-Insulator Technology: Materials to VLSI,” 2nd ed. (Kluwer Academic Publishers, 1997).

Download references

Author information

Authors and Affiliations

  1. Kumamoto National College of Technology, 2569-2 Nishigoshi, Kumamoto, 861-1102, Japan

    K. Hayama, K. Takakura & H. Ohyama

  2. Institut de Microelectrònica de Barcelona (CNM-CSIC), Campus UAB, 08193, Bellaterra, Spain

    J. M. Rafí

  3. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    A. Mercha, E. Simoen & C. Claeys

  4. E.E. Dept, KU Leuven, Belgium

    C. Claeys

Authors
  1. K. Hayama
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K. Takakura
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. H. Ohyama
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. J. M. Rafí
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. Mercha
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. E. Simoen
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. C. Claeys
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Hayama, K., Takakura, K., Ohyama, H. et al. Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation. J Mater Sci: Mater Electron 16, 459–462 (2005). https://doi.org/10.1007/s10854-005-2315-3

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-005-2315-3

Keywords

Search

Navigation