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GaN reactive ion etching using SiCl4:Ar:SF6 chemistry

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Abstract

Reactive ion etching with SiCl4:Ar:SF6 mixtures of gallium nitride epitaxial layers grown by metal organic chemical vapour deposition (MOCVD) has been studied. The effects of several factors such as gas mixture, chamber pressure, and drive power on the etch rate and etched profile have been investigated. A strong dependence of both properties with the amount of SF6 present in the mixture has been found. High etch rates (> 50 nm/min) and controllable sidewall angles and smoothness have been achieved.

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Authors and Affiliations

  1. ISOM-DIE, ETSI Telecomunicación, Universidad Politécnica de Madrid, 28040, Madrid, Spain

    E. Sillero, F. Calle & M. A. Sánchez-García

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  1. E. Sillero
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  2. F. Calle
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  3. M. A. Sánchez-García
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Sillero, E., Calle, F. & Sánchez-García, M.A. GaN reactive ion etching using SiCl4:Ar:SF6 chemistry. J Mater Sci: Mater Electron 16, 409–413 (2005). https://doi.org/10.1007/s10854-005-2306-4

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  • DOI: https://doi.org/10.1007/s10854-005-2306-4

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