Abstract
Undoped ZnO poly crystalline films were successfully grown by a spray pyrolysis method at 300–500∘C. The samples grown at 500∘C indicated high quality because the (0002) orientation was strongly observed in the X-ray diffraction (XRD) spectrum. Surface roughness reduced with increasing substrate temperature and indium concentration. Indium doping caused the resistivity to decrease and the carrier concentration to increase. Electrical conduction types in the undoped and In-doped ZnO films indicated all n-types. From these results, this indicated that indium atoms could act as a donor type impurity.
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Yoshino, K., Fukushima, T. & Yoneta, M. Structural, optical and electrical characterization on ZnO film grown by a spray pyrolysis method. J Mater Sci: Mater Electron 16, 403–408 (2005). https://doi.org/10.1007/s10854-005-2305-5
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DOI: https://doi.org/10.1007/s10854-005-2305-5