Abstract
Raman scattering analysis revealed that the structure of carbon (C) films prepared by pulsed laser deposition at room temperature is predominantly amorphous and the structure of amorphous C nitride (a-CN x ) films can be changed with varying substrate temperatures (ST) from 20 to 500 °C. The deposited a-CN x films are composed of C-N, C-N and C-O bonded materials and the C-N and C=N bonds are increased with ST. We have found no other obvious peaks can be distinguished in the range 900 to 2300 cm−1 in which several peaks always appear in a-CN x films. The spectra were deconvoluted into Raman D and G peaks and the structural parameters are determined. The upward shifts of Raman G peak towards 1592 cm−1 shows the evidence of a progressive formation of crystallites in a-CN x films upon increase of ST. While, the upward shifts of Raman D peak towards 1397 cm−1 have been related to the decreased of bond-angle disorder and sp3 tetrahedral bonding in its structure. Raman FWHM and IDIG also indicate that N incorporation with increased of ST caused an increase in the number and/or size of graphitic domains in the a-CN x films.
Similar content being viewed by others
References
D. S. KNIGHT and W. B. WHITE, J. Mater. Res. 4 (1989) 385.
Y. AOI, K. ONO, K. SAKURADA, E. KAMIJO, M. SASAKI and K. SAKAYAMA, Thin Solid Films 389 (2001) 62.
J. S. LEE, K. S. LIU and I. N. LIN, Appl. Phys. Lett. 68 (1996) 1666.
M. H. GRIMSDITCH and A. K. RAMDAS, Phys. Rev. B 11 (1975) 3139.
V. MEENAKSHI, A. SAYEED and S. V. SUBRAMANYAM, Mater. Sci. Forum 223 (1996) 307.
R. O. DILLON, J. A. WOOLLAM and V. KATKANANT, Phys. Rev. B 29 (1984) 3482.
F. TUINSTRA and J. L. KOENIG, J. Chem. Phys. 53 (1970) 1126.
R. J. NEMANICH and G. LUCOVSKY, Solid State Commun. 23 (1977) 117.
D. BEEMAN, J. SILVERMAN, R. LYNDS and M. R. ANDERSON, Phys. Rev. B 30(2) (1984) 870.
R. J. NEMANICH and S. A. SOLIN, ibid. 20 (1979) 392.
J. SHIAO and R. W. HOFFMAN, Thin Solid Films 283 (1996) 145.
J. SCHWAN, S. ULRICH, V. BATORI, H. EHRHARDT and S. R. P. SILVA, J. Appl. Phys. 80 (1996) 440.
R. KALISH, Y. LIFSHITZ, K. NUGENT and S. PRAWER, Appl. Phys. Lett. 74 (1999) 2936.
M. A. TAMOR and W. C. VASSELL, J. Appl. Phys. 76 (1994) 3823.
J. P. ZHAO, Z. Y. CHEN, T. YANO, T. OOIE and M. YONEDA, ibid. 89(3) (2001) 1580.
J. H. KAUFMAN, S. METIN and D. D. SAPERSTEIN, Phys. Rev. B 39 (1989) 13053.
D. Y. LEE, Y. H. KIM, I. K. KIM and H. K. BAIK, Thin Solid Films 355 (1999) 239.
H. TSAI and D. B. BOGGY, J. Vac. Sci. Technol. A 5 (1987) 3287.
C. J. TORNG, J. M. SILVERTSEN, J. H. JUDY and C. CHANG, J. Mater. Res. 5 (1990) 2490.
M. Y. CHEN, D. LI, X. LIN, V. P. DRAVID, Y. W. CHUNG, M. S. WONG and W. D. SPROUL, J. Vac. Sci. Technol. A 11 (1993) 521.
H. X. HAN and B. J. FELDMAN, Solid State Commun. 65 (1988) 921.
M. WIXOM, J. Am. Ceram. Soc. 73 (1990) 1973.
G. MARIOTTO, F. L. FREIRE JR}. and C. A. ACHETE, Thin Solid Films 241 (1994) 255.
F. ROSSI, B. ANDRE, A. VEEN, P.E. MIJNARENDS, H. SCHUT, F. LABOHM, H. DUNLOP, M. P. DELPLANCKE and K. HUBBARD, J. Mater. Res. 9 (1994) 2440.
S. M. MOMINUZZAMAN, K. M. KRISHNA, T. SOGA, T. JIMBO and M. UMENO, Jpn. J. Appl. Phys. 38 (1999) 658.
Idem., Carbon 38 (2000) 127.
J. SCHWAN, S. ULRICH, V. BATORI, H. EHRHARDT and S. R. P. SILVA, J. Appl. Phys. 80 (1996) 440.
N. H. CHO, K. M. KRISHNAN, D. K. VEIRS, M. D. RUBIN, C. B. HOPPER, B. BHUSHAN and D. B. BOGGY, J. Mater. Res. 5 (1990) 2543.
P. PAPAKONSTANTINOU, D. A. ZEZE, A. KLINI and J. MCLAUGHLIN, Diamond Relat. Mater. 10 (2001) 1109.
Y. K. YAP, S. KIDA, T. AOYAMA, Y. MORI and T. SASAKI, Appl. Phys. Lett. 73 (1998) 7.
H. C. BARSHILIA, S. SAH, B. R. MEHRA, V. D. VANKAR, D. K. AVASTHI and G. K. MEHTA, Thin Solid Films 258 (1995) 123.
T. WERNIGHAUS, D. R. T. ZAHN, E. G. WANG and Y. CHEN, Diamond Relat. Mater. 7 (1998) 52.
P. N. WANG, Z. GUO, X. T. YING, J. H. CHEN, X. M. XU and F. M. LI, Phys. Rev. B 59 (1999) 13347.
T. Y. YEN and C. P. CHOU, Solid State Commun. 95 (1995) 281.
Idem., Appl. Phys. Lett. 67(19) (1995) 2801.
S. R. P. SILVA, R. U. A. KHAN, A. P. BARDEN, J. V. ANGUITA, J. M. SHANNON, B. J. SEALY, A. J. PAPWORTH, C. J. KEILY and G. A. J. AMARATUNGA, Thin Solid Films 332 (1998) 118.
Y. H. CHENG, X. L. QIAO, J. G. CHEN, Y. P. WU, C. S. XIE, Y. Q. WANG, D. S. XU, H. KUPFER, F. RICHTER, S. B. MO and Y. B. SUN, Diam. Relat. Mater. 11 (2002) 1511.
P. N. WANG, Z. GUO and X. T. YING, Phys. Rev. B 61(20) (1999) 13347.
A. BOUSETTA, M. LU and A. BENSAOULA, J. Vac. Sci. Technol. A 13 (1995) 1639.
A. BOUSETTA, M. LU, A. BENSAOULA and A. SCHULTZ, Appl. Phys. Lett. 65 (1994) 696.
C. M. LIEBER and Z. J. ZHANG, Adv. Mater. 6 (1994) 497.
A. LIU and M. L. COHEN, Science 245 (1989) 841.
Idem., Phys. Rev. B 41 (1990) 10727.
N. WADA, S. A. SOLIN, J. WONG and S. PROCHAZKA, J. Non-Cryst. Solids 43 (1981) 7.
Z. M. REN, Y. C. DU, Z. F. YING, Y. X. QIU, X. X. XIONG, J. D. WU and F. M. LI, Appl. Phys. Lett. 65(11) (1994) 1361.
Z. M. REN, P. N. WANG, Y. C. DU and Z. F. YING, Appl. Phys. A 65 (1997) 107.
S. L. SUNG, C. H. TSENG, F. K. CHIANG, X. J. GUO and X. W. LIU, Thin Solid Films 340 (1999) 169.
T. W. SCAF, R. D. OTT, D. YANG and J. A. BARNARD, J. Appl. Phys. 85 (1999) 3142.
Y. F. LU, Z. M. REN, W. D. SONG, D. S. H. CHAN, T. S. LOW, K. GAMANI, G. CHEN and K. LI, ibid. 84 (1998) 2909.
M. FRIEDRICH, T. WELZEL, R. ROCHOTZKI, H. KUPFER and D. R. T. ZOHN, Diam. Relat. Mater. 6 (1997) 33.
X. A. ZHAO, C. W. ONG, Y. C. TSANG, Y. W. WONG, P. W. CHAN and C. L. CHOY, Appl. Phys. Lett. 66 (1995) 2652.
Y. AOI, K. ONO and E. KAMIJO, J. Appl. Phys. 86 (1999) 2318.
Z. Y. CHEN, J.P. ZHAO, T. YANO, T. OOIE, M. YONEDA and J. SAKAKIBARA, ibid. 88(12) (2000) 7060.
J. J. CUOMO, P. A. LEARY, D. YU, W. REUTER and M. FRISH, J. Vac. Sci. Technol. 16 (1979) 299.
N. C. CHO, D. K. VEIRS, J. W. AGER, M. D. RUBIN, C. B. HOOPER and D. B. BOGY, J. Appl. Phys. 71 (1992) 2243.
F. L. FREIRE JR., C. A. ACHETE, G. MARIOTTO and R. CANTERI, J. Vac. Sci. Technol. A 12 (1994) 3048.
F. L. FREIRE JR. and D. F. FRANCHESCHINI, Thin Solid Films 293 (1997) 236.
S. PRAWER, K. W. NUGENT, Y. LIFSHITZ, G. D. LEMPERT, E. GROSSMAN, R. KALISH and Y. AVIGAL, Diam. Relat. Mater. 5 (1996) 433.
E. H. LEE, J. D. M. HEMBREE, G. R. RAO and L. K. MANSUR, Phys. Rev. B 48(21) (1993) 15540.
F. RICHTER, K. BEWILOGUA, H. KUPTER, I. MUHLING, B. RAU, B. ROTHER and D. SCHUMACHER, Thin Solid Films 212(1) (1992) 245.
Y. G. GOGOTSI and M. YOSHIMURA, Nature 367(6464) (1994) 628.
E. J. CHI, J. Y. SHIM, D. J. CHOI and H. K. BAIK, J. Vac. Sci. Technol. B 16 (1998) 1219.
L. K. CHEAH, X. SHI, B. K. TAY, S. R. P. SILVA and Z. SUN, Diam. Relat. Mater. 7 (1998) 640.
T. HAN, N. LEE, S. W. LEE, S. H. KIM and D. JEON, J. Vac. Sci. Technol. B 16 (1998) 2052.
D. BEEMAN and J. SILVERMAN, Phys. Rev. B 5 (1972) 4951.
B. DORFMAN, M. ABRAIZOV, F. H. POLLAK, D. YAN, M. STRNGIN, X. Q. YANG and Z. Y. RONG, Mater. Res. Soc. Symp. Proc. 349 (1994) 547.
Z. M. REN, Y. F. LU, D. H. K. HO, T. C. CHONG, B. A. CHEONG, S. I. PANG, J. P. WANG} and L. LI, Jpn. J. Appl. Phys. Part 1 38 (1999) 4859.
M. A. BAKER and P. HAMMER, Surf. Inter. Anal. 25 (1997) 629.
M. A. TAMOR, J. A. HAIRE, C. H. WU and K. C. HASS, Appl. Phys. Lett. 54 (1989).
J. J. HAUSER, J. Non-Cryst. Solids 23 (1977) 21.
J. TAUC, in “Amorphous and Liquid Semiconductors” (Plenum Press, London, New York, 1974) Chap. 4.
J. TAUC, R. GRIGOROVICI and A. VANCU, Phys. Status Solidi 15 (1966) 627.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Rusop, M., Soga, T. & Jimbo, T. Investigation of structural properties of amorphous carbon nitride thin films prepared by xenon cloride pulsed laser deposition of camphoric carbon precursor. J Mater Sci: Mater Electron 16, 365–375 (2005). https://doi.org/10.1007/s10854-005-1148-4
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s10854-005-1148-4