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Two-step growth of SrTiO3 films on Sr-modulated Si(001) substrates

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Abstract

Perovskite-type SrTiO3 (STO) films have been grown on the Sr-modulated Si(001) substrates using “two-step growth method” with a molecular beam epitaxy technique. About 6 Å Sr was deposited on the surface of chemically formed SiO2/Si at 800 ∘C, which resulted in the formation of Si(001)-Sr(2 × 1) surface. About 250-Å-thick STO films have been deposited on the Si(001)-Sr(2 × 1) surface at 350 ∘C in the O2 partial pressure of approximately 3 × 10−7 Torr (first step), followed by an annealing at 600 ∘C in a pressure of 3 × 10−9 Torr (second step). Reflection high-energy electron diffraction patterns of grown films become elongated streaky features after the annealing, suggesting the solid-phase epitaxial growth of STO. The presence of strong STO(001) and STO(002) diffraction peaks in X-ray diffraction measurements suggests that the high-quality crystalline STO films grow on the Sr-modulated Si(001) substrates by the two-step growth method. Atomic force microscopy image shows the smooth surface with root mean square roughness of about 18 Å.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, Toyama, 930-8555, Japan

    M. N. K. Bhuiyan, H. Kimura, T. Tambo & C. Tatsuyama

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  1. M. N. K. Bhuiyan
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  2. H. Kimura
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  3. T. Tambo
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  4. C. Tatsuyama
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Correspondence to M. N. K. Bhuiyan.

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Bhuiyan, M.N.K., Kimura, H., Tambo, T. et al. Two-step growth of SrTiO3 films on Sr-modulated Si(001) substrates. J Mater Sci: Mater Electron 16, 225–228 (2005). https://doi.org/10.1007/s10854-005-0772-3

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  • DOI: https://doi.org/10.1007/s10854-005-0772-3

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