Effects of oriented growth on properties of Ag/Bi₄Ti₃O₁₂/p-Si heterostructure prepared by Sol-Gel method with rapid thermal annealing techniques

Abstract

Ag/Bi₄Ti₃O₁₂/p-Si heterostructures were fabricated by Sol-Gel method with rapid thermal annealing techniques. The effects of oriented growth on ferroelectric characteristics and electrical properties of Bi₄Ti₃O₁₂ film were investigated. Bi₄Ti₃O₁₂ films on bare p-Si exhibit preferred c-axis-orientation with the increase of annealing temperature, which would impair the ferroelectric properties but help to drop down the leakage current density of Bi₄Ti₃O₁₂ films. The Polarization-Voltage curves and the electrical characteristics curves show that the Bi₄Ti₃O₁₂ films annealed at 650 ^∘C for 5 min have good ferroelectric and electrical properties with a remanent polarization of 8.3 μC/cm² and a leakage current density of < 5 × 10⁻⁹ A/cm² at 6 V, which demonstrate that the Ag/Bi₄Ti₃O₁₂/p-Si heterostructure by Sol-Gel method with rapid thermal annealing techniques is a promising configuration for MFS-FETs applications.