Abstract
SiNx thin films have garnered attention as promising barrier films, primarily due to their low impurity diffusion rates, making them suitable for various technological applications. Despite their potential, these films face challenges because they are prone to degradation in hostile environments. This study investigated the oxidation behavior of SiNx thin films, particularly when deposited on two different types of substrates: rigid silicon (Si) and flexible polyethylene terephthalate (PET) films. A thorough microstructural analysis of the SiNx films reveals their detailed morphological and compositional characteristics, enabling a comparison between the SiNx/Si and SiNx/PET films. This study further investigates the impacts of high-temperature and humidity exposure on SiNx thin films, systematically elucidating the degradation behaviors and underlying mechanisms. The structural evolution during SiNx film oxidation is illustrated at the nanoscale, and the factors contributing to the oxidation were analyzed. This study deepens our understanding of the interplay between oxidation processes and the unique environmental conditions of substrates, offering insights into enhancing the stability and reliability of these materials.
Graphical abstract
Similar content being viewed by others
Data availability
The experimental data generated during the current study are available from the corresponding author on reasonable request.
References
Iqbal A, Jackson WB, Tsai CC, Allen JW, Bates CW Jr (1987) Electronic structure of silicon nitride and amorphous silicon/silicon nitride band offsets by electron spectroscopy. J Appl Phys 61:2947–2954
Chen TN et al (2006) High-performance transparent barrier films of SiOx∕SiNx stacks on flexible polymer substrates. J Electrochem Soc 153:F244–F248
Habraken FHPM, Kuiper AET (1994) Silicon nitride and oxynitride films. Mater Sci Eng R Rep 12:123–175
Gatz S, Plagwitz H, Altermatt PP, Terheiden B, Brendel R (2008) Thermal stability of amorphous silicon/silicon nitride stacks for passivating crystalline silicon solar cells. Appl Phys Lett 93:173502-1–173502-3
Du Q et al (2017) Gamma radiation effects in amorphous silicon and silicon nitride photonic devices. Opt Lett 42:587–590
Kuo Y (1994) Thin film transistors with graded SiNx gate dielectrics. J Electrochem Soc 141:1061–1065
Huang W et al (2003) Low temperature PECVD SiNx films applied in OLED packaging. Mater Sci Eng B 98:248–254
Han J, Yin YJ, Han D, Dong L (2017) Improved PECVD SixNy film as a mask layer for deep wet etching of the silicon. Mater Res Express 4:096301-1–096301-7
Ulvestad A, Mæhlen JP, Kirkengen M (2018) Silicon nitride as anode material for Li-ion batteries: Understanding the SiNx conversion reaction. J Power Sources 399:414–421
Cho S-K, Cho T-Y, Lee WJ, Ryu J, Lee JH (2021) Structural and gas barrier properties of hydrogenated silicon nitride thin films prepared by roll-to-roll microwave plasma-enhanced chemical vapor deposition. Vacuum 188:110167-1–110167-9
Cho T-Y et al (2018) Moisture barrier and bending properties of silicon nitride films prepared by roll-to-roll plasma enhanced chemical vapor deposition. Thin Solid Films 660:101–107
Bilger G, Voss T, Schlenker T, Strohm A (2006) High-temperature diffusion barriers from Si-rich silicon-nitride. Surf Interface Anal 38:1687–1691
Huang H et al (2006) Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films. Mater Sci Eng A 435–436:453–459
Oh SJ, Ma BS, Yang C, Kim T-S (2022) Intrinsic mechanical properties of free-standing SiNx thin films depending on PECVD conditions for controlling residual stress. ACS Appl Electron Mater 4:3980–3987
Schmidt S et al (2016) SiNx coatings deposited by reactive high power impulse magnetron sputtering: process parameters influencing the nitrogen content. ACS Appl Mater Interfaces 8:20385–20395
Ovanesyan RA, Hausmann DM, Agarwal S (2015) Low-temperature conformal atomic layer deposition of SiNx films using Si2Cl6 and NH3 plasma. ACS Appl Mater Interfaces 7:10806–10813
Kim KS et al (2017) Silicon nitride deposition for flexible organic electronic devices by VHF (162 MHz)-PECVD using a multi-tile push-pull plasma source. Sci Rep 7:13585-1–13585-7
Wan Y, McIntosh KR, Thomson AF (2013) Characterisation and optimisation of PECVD SiNx as an antireflection coating and passivation layer for silicon solar cells. AIP Adv 3:032113-1–032113-14
Braña AF et al (2018) Enhancing efficiency of c-Si solar cell by coating nano structured silicon rich silicon nitride films. Thin Solid Films 662:21
Oh MH, Park EK, Kim SM, Heo J, Kim HJ (2016) Long-term stability of SiNx thin-film barriers deposited by low temperature PECVD for OLED. ECS J Solid State Sci Technol 5:R55–R58
Ma DH et al (2018) Oxidation behavior of amorphous silicon nitride nanoparticles. Ceram Int 44:1443–1447
Lee WJ, Cho T-Y, Choa S-H, Cho S-K (2021) Environmental reliability and moisture barrier properties of silicon nitride and silicon oxide films using roll-to-roll plasma enhanced chemical vapor deposition. Thin Solid Films 720:138524-1–138524-8
Kuiper AET et al (1989) Thermal oxidation of silicon nitride and silicon oxynitride films. J Vac Sci Technol B 7:455–465
Hegedüs N, Balázsi K, Balázsi C (2021) Silicon nitride and hydrogenated silicon nitride thin films: a review of fabrication methods and applications. Mater 14:5658-1–5658-21
Jehanathan N, Liu Y, Walmsley B, Dell J, Saunders M (2006) Effect of oxidation on the chemical bonding structure of PECVD SiNx thin films. J Appl Phys 100:123516-1–123516-7
Wood GC (1970) High-temperature oxidation of alloys. Oxid Met 2(1):11–57
Langelier B et al (2016) An atom probe tomography study of internal oxidation processes in Alloy 600. Acta Mater 109:55–68
Shen Z et al (2020) Microstructural understanding of the oxidation of an austenitic stainless steel in high-temperature steam through advanced characterization. Acta Mater 194:321–336
Shen Z et al (2020) New insights into the oxidation mechanisms of a Ferritic-Martensitic steel in high-temperature steam. Acta Mater 194:522–539
Chen K, Zhang L, Shen Z (2020) Understanding the surface oxide evolution of T91 ferritic-martensitic steel in supercritical water through advanced characterization. Acta Mater 194:156–167
Hughey MP, Cook RF (2004) Massive stress changes in plasma-enhanced chemical vapor deposited silicon nitride films on thermal cycling. Thin Solid Films 460:7–16
Freund LB, Suresh S (2004) Thin film materials: stress, defect formation and surface evolution. Cambridge University Press
Malerba C et al (2016) Blistering in Cu2ZnSnS4 thin films: correlation with residual stresses. Mater Des 108:725–735
Jehanathan N, Walmsley B, Liu Y, Dell J (2007) Oxidation of PECVD SiNx thin films. J Alloys Compd 437:332–338
Dupuis J, Fourmond E, Ballutaud D, Bererd N, Lemiti M (2010) Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition. Thin Solid Films 519:1325–1333
Tien C-L, Lin T-W (2012) Thermal expansion coefficient and thermomechanical properties of SiNx thin films prepared by plasma-enhanced chemical vapor deposition. Appl Opt 51:7229–7235
Banerji N et al (1998) Oxidation processes in hydrogenated amorphous silicon nitride films deposited by ArF laser-induced CVD at low temperatures. Thin Solid Films 317:214–218
Catheline C, Inal K, Burr A, Georgi F, Cauro R (2018) Hypothetic impact of chemical bonding on the moisture resistance of amorphous SixNyHz by plasma-enhanced chemical vapor deposition. Metall Res Technol 115:406-1–406-6
Lanford WA, Rand MJ (2008) The hydrogen content of plasma-deposited silicon nitride. J Appl Phys 49:2473–2477
Knolle WR, Osenbach JW (1985) The structure of plasma-deposited silicon nitride films determined by infrared spectroscopy. J Appl Phys 58:1248–1254
Næss MK, Tranell G, Olsen JE, Kamfjord NE, Tang K (2012) Mechanisms and kinetics of liquid silicon oxidation during industrial refining. Oxid Met 78:239–251
Starodub D, Gusev E, Garfunkel E, Gustafsson T (1999) Silicon oxide decomposition and desorption during the thermal oxidation of silicon. Surf Rev Lett 6:45–52
Opila EJ & Jacobson NS (1998) Volatile Si–O–H species in combustion environments. NASA technical reports server: NTRS Doc. ID: 19980237186, Washington DC, US National Aeronautics and Space Administration
Goodfellow (2024) Properties of polyethylene terephthalate polyester (PET, PETP), https://www.azom.com/article.aspx?ArticleID=2047
Acknowledgements
This work was supported by the institutional research program (KK2452-20) and the support program for young researchers (BSK24-131) funded by KRICT. The authors also acknowledge support from infrastructure development for the reliability of flexible display technology (TS244-04R).
Author information
Authors and Affiliations
Contributions
GJ and HY conceived the project and performed environmental testing and material characterizations. SK carried out materials characterizations. JE, TC, and SC carried out sample fabrications, and IS, JL, WL, and KH provided inputs for the analysis. HY directed the project and prepared the manuscript with contributions from all authors.
Corresponding author
Ethics declarations
Conflict of interest
The authors declare no conflict of interest.
Ethical approval
Not applicable.
Additional information
Handling Editor: Zhao Shen.
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Jung, G., Kim, S., Eom, J. et al. Substrate-dependent structural evolution during the oxidation of SiNx thin films. J Mater Sci (2024). https://doi.org/10.1007/s10853-024-09751-w
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s10853-024-09751-w