Interfacial structures between aluminum nitride and Cu–P–Sn–Ni brazing alloy with Ti film

Abstract

Control of Ag electro chemical migration is crucial for long–term reliability of electrical components in high–voltage applications. In this work, Cu was bonded onto an AlN substrate at temperatures between 650 °C and 950 °C for 1 h using a Ag free Cu–P–Sn–Ni brazing filler metal with Ti as an active metal addition. The interfacial structure between the Cu and the AlN and the mechanical properties of the bond were both investigated. Three different phases which contain Ti and O were observed during the growth process of the Cu/AlN interfacial reaction layer: an amorphous P–Ti–O phase, an amorphous Ti–O phase and rutile, TiO2. The most stable Cu/AlN interfacial structure occurred when rutile was present, and where a particular orientation relationship with AlN was observed: TiO2 (101)//AlN (0001), TiO2 [010]//AlN [\(11\overline{2}0\)]. The probability of Cu/AlN interfacial fracture decreased as the bonding temperature was increased. Cu/AlN interfacial fracture was completely suppressed above 850 °C where rutile was the dominant phase at the Cu/AlN interface.

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References

  1. 1

    M. Toriumi, H. Tanaka, H. Yoshida (1994) The development of Al circuit substrate for power module, IMC 1994 Proceedings, 104–109.

  2. 2

    T. Harada, Y. Baba, Development of IGBT module for the TOYOTA hybrid system, Proceedings of 15th International Conference of Electric Vehicles (EVS-15), 1998, CDROM.

  3. 3

    Y. Nagatomo, T. Nagase, The study of the power modules with high reliability for EV use, Proceedings of 17th International Conference of Electric Vehicles (EVS-17), 2000, CDROM.

  4. 4

    Piton M, Chauchat B, Servière JF (2018) Implementation of direct chip junction temperature measurement in high power IGBT module in operation - railway traction converter. Microelectron Reliab 88–90:1305–1310

    Article  Google Scholar 

  5. 5

    Kim C-K, Sood VK, Jang G-S, Lim S-J, Lee S-J, Transmission HVDC (2009) Power Conversion Applications in Power Systems. John Wiley & Sons Ltd., New York

    Google Scholar 

  6. 6

    X. S. Ning, Y. Ogawa, K. Suganuma., (1996) Interface of aluminum/ceramic power substrates manufactured by casting-bonding process, Materials Research Society Symposium Proceedings, 445: 101–106.

  7. 7

    Kuromitsu Y, Nagatomo Y, Akiyama K, Shibata N, Ikuhara Y (2017) Direct-bonded aluminum on aluminum nitride substrates by transient liquid phase bonding. J Ceram Soc Jpn 125(3):165–167

    CAS  Article  Google Scholar 

  8. 8

    Burgess JF, Neugebauer CA, Flanagan G, Moore RE (1976) The direct bonding of metals to ceramics and application in electronics. Electrocomponent Sci Technol 2:233–240

    CAS  Article  Google Scholar 

  9. 9

    Schulz-Harder J (2003) Advantages and new development of direct bonded copper substrates. Microelectron Reliab 43(3):359–365

    CAS  Article  Google Scholar 

  10. 10

    Taranets NYu, Jones H (2004) Wettability of aluminum nitride based ceramics of different porosity by two active silver based brazing alloys. Mater Sci Eng, A 379:251–257

    Article  Google Scholar 

  11. 11

    Okamura H, Shinohara H, Funamoto T, Shida T (1991) Bonding mechanism and microstructure of bonded zone of AlN ceramics with Ti-AgCu brazing metal. Quarterly Journal of the Japan Welding Society 9(4):494–501

    CAS  Article  Google Scholar 

  12. 12

    Nakao Y, Nishimoto K, Saida K, Murabe K, Fukaya Y (1994) Microstructure of bonding layer in aluminum nitride to metals joints bonded by active brazing method. Quarterly Journal of the Japan Welding Society 12(1):115–121

    CAS  Article  Google Scholar 

  13. 13

    Nakao Y, Nishimoto K, Saida K, Murabe K, Fukaya Y (1994) Bonding of aluminum nitride to copper for reducing thermal stress. Mater Trans, JIM 35(12):910–916

    CAS  Article  Google Scholar 

  14. 14

    Huh D, Kim D-H (1997) Joining of AlN to Cu using In-base active brazing fillers. J Mater Res 12(4):1048–1055

    CAS  Article  Google Scholar 

  15. 15

    Terasaki N, Ohashi T, Nagatomo Y, Kuromitsu Y, Shirzadi AA (2019) A new method for liquid-phase bonding of copper plates to aluminum nitride (AlN) substrates used in high-power modules. J Mater Sci: Mater Electron 30:6552–6555

    CAS  Google Scholar 

  16. 16

    Saitoh O, Suzumura A, Ogawa H (1996) The corrosion phenomena of ruby by active metal brazing filler (Ag-Cu-Ti) at the brazing interface. Quarterly Journal of the Japan Welding Society 14(4):717–722

    CAS  Article  Google Scholar 

  17. 17

    Ali M, Knowles KM, Mallinson PM, Fernie JA (2016) Interfacial reactions between sapphire and Ag-Cu-Ti-based active brazed alloys. Acta Mater 103:859–869

    CAS  Article  Google Scholar 

  18. 18

    Kato S, Yano T, Iseki T (1993) Interfacial structures between Ag-Cu-Ti alloys and sintered SiC with various additives. J Ceram Soc Jpn 101(3):325–330

    CAS  Article  Google Scholar 

  19. 19

    Sun F-L, Feng J-C, Li D (2001) Bonding of CVD diamond thick films using an Ag-Cu-Ti brazing alloy. J Mater Process Technol 115(3):333–337

    CAS  Article  Google Scholar 

  20. 20

    Kohman GT, Hermance HW, Downes GH (1955) Silver migration in electrical insulation. Bell Syst Tech J 34(6):1115–1147

    CAS  Article  Google Scholar 

  21. 21

    Liu Y-L, Long J-M, Zhu X-Y, Liu W-J (2011) Electrochemical migration characteristics of Ag-plated Cu powders in conductive thick film. Advanced Materials Research 146–147:1070–1074

    Google Scholar 

  22. 22

    Lin JC, Chan JY (1996) On the resistance of silver migration in Ag-Pd conducive thick films under humid environment and applied d.c. field. Mater Chem Phys 43(3):256–265

    CAS  Article  Google Scholar 

  23. 23

    J. S. Cho, K. A. Yoo, S. J. Hong, J. T. Moon, Y. J. Lee (2010) Pd effects on the reliability in the low cost Ag bonding wire, Proceedings of 60th Electronic Components and Technology Conference (ECTC), 1541–1546.

  24. 24

    Terasaki N (2020) Development of a high reliability power-module substrate via metal/ceramic bonding technology, in Development and Mounting Technology of Printed Wiring Board Materials. Technical Information Institute Co., Ltd, Tokyo, pp 148–155

    Google Scholar 

  25. 25

    S. Takakuwa, N. Terasaki, T. Ohashi, Development of a new bonding technique between Cu and Si3N4 by using Ag free bonding material, Proceedings of the 26th Symposium on Microjoining and Assembly Technology in Electronics, 26, 2020, 281–284.

  26. 26

    Terasaki N (2018) Development of a high reliability power-module substrate via new bonding process using Ag free bonding material. Journal of Smart Processing 7(5):172–175

    CAS  Article  Google Scholar 

  27. 27

    N. Terasaki, Y. Nagatomo, T. Nagase, Y. Kuromitsu, New power module structures consisting of both Cu and Al bonded to AlN substrates with an Al base plate, Proceedings of 8th International Conference on Integrated Power Electronics Systems, 2014, 456–460.

  28. 28

    Tokumoto Y, Sato Y, Yamamoto T, Shibata N, Ikuhara Y (2006) Atomic structure of AlN/Al2O3 interfaces fabricated by pulsed-laser deposition. J Mater Sci 41:2553–2557. https://doi.org/10.1007/s10853-006-7767-1

    CAS  Article  Google Scholar 

  29. 29

    Kehagias T, Komninou P, Nouet G, Ruterana P, Karakostas T (2001) Misfit relaxation of the A l N/A l 2 O 3 (0001) interface. Physical Review B 64(19):195329

    Article  Google Scholar 

  30. 30

    J. L. Murray, H. A. Wriedt, O–Ti (Oxygen–Titanium), Binary Alloy Phase Diagrams, 2nd. Edition, Ed. T.B. Massalski, H. Okamoto, P.R. Subramanian, L. Kacprzak, ASM International, Materials Park, OH, Vol. 3, 1990, 2924–2927.

  31. 31

    H. A. Wriedt, Al–N (Aluminum–Nitrogen), Binary Alloy Phase Diagrams, 2nd. Edition, Ed. T.B. Massalski, H. Okamoto, P.R. Subramanian, L. Kacprzak, ASM International, Materials Park, OH, Vol. 1, 1990, 176–177.

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Correspondence to Nobuyuki Terasaki.

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Terasaki, N., Kon, N., Chiba, H. et al. Interfacial structures between aluminum nitride and Cu–P–Sn–Ni brazing alloy with Ti film. J Mater Sci 56, 8778–8788 (2021). https://doi.org/10.1007/s10853-021-05799-0

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