Abstract
The growth of graphene on Ni magnetic films is of great significance for graphene spintronics, whereas the existence of grain boundaries and twin crystal structures in Ni films is an obstacle for obtaining the large-scale and uniform graphene. In this paper, an epitaxial wafer-scale single-crystalline Ni(111) film with the flat and clean surface was successfully prepared on the commercial α-Al2O3(0001) substrate by a two-step method, which was demonstrated with several characterization methods. According to the abnormal grain growth mechanism, the clean and uniform sapphire surface plays a key role for the single crystallization of Ni films as it induces a weak interface energy difference between two atomic stacking structures (ABC and ACB), thus stimulating the evolution of Ni films from (111) out-of-plane textures to single crystals. Furthermore, an ultra-flat and wrinkle-free graphene monolayer was synthesized on the prepared Ni film, which further verified its high quality and effectiveness.
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Acknowledgements
The authors thank Yu Zhu, Wei Wei, Xiao Chen in Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, for the helpful discussions. This work is supported by National Natural Science Foundation of China (Grant Nos. 62004223, 11604384, 61671460 and 51507178), China Postdoctoral Science Foundation (Grant No. 2016M603000) and Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (Grant No. KF202012).
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Hu, Y., Peng, J., Pan, M. et al. Wafer-scale epitaxial single-crystalline Ni(111) films on sapphires for graphene growth. J Mater Sci 56, 3220–3229 (2021). https://doi.org/10.1007/s10853-020-05450-4
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DOI: https://doi.org/10.1007/s10853-020-05450-4