Abstract
This work investigates the diffusion of metal atoms into phase change chalcogenides, which is problematic because it can destroy resonances in photonic devices. Interfaces between \(\hbox {Ge}_2\hbox {Sb}_2\hbox {Te}_5\) and metal layers were studied using X-ray reflectivity and reflectometry of metal–\(\hbox {Ge}_2\hbox {Sb}_2\hbox {Te}_5\) layered stacks. The diffusion of metal atoms influences the crystallisation temperature and optical properties of phase change materials. When Au, Ag, Al, W structures are directly deposited on \(\hbox {Ge}_2\hbox {Sb}_2\hbox {Te}_5\), inter-diffusion occurs. Indeed, Au reacts with \(\hbox {Ge}_2\hbox {Sb}_2\hbox {Te}_5\) to form a \(\hbox {AuTe}_2\) layer at the interface. Diffusion barrier layers, such as \(\hbox {Si}_3\hbox {N}_4\) or stable plasmonic materials, such as TiN, can prevent the interfacial damage. This work shows that the interfacial diffusion must be considered when designing phase change material-tuned photonic devices, and that TiN is the most suitable plasmonic material to interface directly with \(\hbox {Ge}_2\hbox {Sb}_2\hbox {Te}_5\).
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Acknowledgements
This work was performed under the auspices of the SUTD-MIT international design centre (IDC) with project funding from A-Star (Project Number 1420200046), the Singapore Ministry of Education (MoE) Tier 1 (Project Number T1MOE1703). The work was initiated by a Samsung GRO project. LL, WD, and JB are grateful for their MoE funded SUTD Ph.D. scholarships.
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Lu, L., Dong, W., Behera, J.K. et al. Inter-diffusion of plasmonic metals and phase change materials. J Mater Sci 54, 2814–2823 (2019). https://doi.org/10.1007/s10853-018-3066-x
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DOI: https://doi.org/10.1007/s10853-018-3066-x