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Structural and dielectric properties of ion beam deposited titanium oxynitride thin films

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Abstract

Titanium oxynitride (\({\hbox {TiO}}_{x}{\hbox {N}}_{y}\)) thin films were fabricated by ion beam-assisted sputtering deposition. Effects of oxygen contribution, assisting ion energy (\(E_{\mathrm{a}}\)), assisting ion beam current (\(I_{\mathrm{a}}\)) on the microstructure and dielectric behavior of the films were analyzed. The results show that increasing O content made the films to turn from fcc-TiN (111)-oriented to fcc \({\hbox {TiO}}_{x}{{\hbox {N}}}_{y}\) (220)-oriented. Proper \(E_{\mathrm{a}}\) and low \(I_{\mathrm{a}}\) can enhance the (220) orientation in \({\hbox {TiO}}_{x}{{\hbox {N}}}_{y}\) thin films. The increase in oxygen content leads to the red-shift of plasmonic resonant frequency and makes the films more dielectric. Higher \(E_{\mathrm{a}}\) and \(I_{\mathrm{a}}\) make the \({\hbox {TiO}}_{x}{{\hbox {N}}}_{y}\) films more metallic. Atomic composition is an important factor underlying the results. The study provides a method to control the plasmonic properties of oxynitride films in a wide range by atomic composition and assisting ions.

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Acknowledgements

The research is financially supported by National Natural Science Foundation of China (Project 51002010 and Project 11274040). We thank Dr. Xianfeng-Zhang for spectroscopic ellipsometry measurement.

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Authors and Affiliations

  1. School of Physics, Beijing Institute of Technology, Beijing, 100081, People’s Republic of China

    Liuwei Jia, Huiping Lu, Yujing Ran, Shujun Zhao, Haonan Liu, Yinglan Li, Zhaotan Jiang & Zhi Wang

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  1. Liuwei Jia
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  8. Zhi Wang
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Correspondence to Zhi Wang.

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Jia, L., Lu, H., Ran, Y. et al. Structural and dielectric properties of ion beam deposited titanium oxynitride thin films. J Mater Sci 54, 1452–1461 (2019). https://doi.org/10.1007/s10853-018-2923-y

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  • DOI: https://doi.org/10.1007/s10853-018-2923-y

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