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Enhancing oxidation rate of 4H–SiC by oxygen ion implantation

  • Ceramics
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Abstract

In this study, the thermal oxidation rate of oxygen ion (O+) implanted 4H–silicon carbide (SiC) was investigated. And the critical breakdown electric field (Ebreakdown) and capacitance–voltage (CV) curve of the grown oxide (SiO2) film were also evaluated. It is found that the thermal SiO2 growth rate on 4H–SiC (0001) face was significantly improved by O+ implantation. Ebreakdown test results showed that the unconsumed amorphous and damaged crystalline layer under the grown SiO2 contained defects leading to an inferior critical breakdown field. Thus, in order to obtain a high-quality SiO2 film, the oxidation process should be designed delicately so that the damaged layer by implantation could be fully consumed.

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Acknowledgements

This work is supported by The National Key Research and Development Program of China (2016YFB0400400) and the CAS Key Technology Talent Program.

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Authors and Affiliations

  1. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China

    Min Liu, Shuyuan Zhang, Xiang Yang, Xue Chen, Zhongchao Fan, Xiaodong Wang & Fuhua Yang

  2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing, 100049, People’s Republic of China

    Min Liu, Shuyuan Zhang & Fuhua Yang

  3. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China

    Fuhua Yang

  4. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China

    Zhongchao Fan

  5. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People’s Republic of China

    Chao Ma & Zhi He

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  1. Min Liu
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  2. Shuyuan Zhang
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  3. Xiang Yang
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  4. Xue Chen
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  5. Zhongchao Fan
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  6. Xiaodong Wang
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  7. Fuhua Yang
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  8. Chao Ma
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  9. Zhi He
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Corresponding authors

Correspondence to Zhongchao Fan, Fuhua Yang or Zhi He.

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Liu, M., Zhang, S., Yang, X. et al. Enhancing oxidation rate of 4H–SiC by oxygen ion implantation. J Mater Sci 54, 1147–1152 (2019). https://doi.org/10.1007/s10853-018-2921-0

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  • DOI: https://doi.org/10.1007/s10853-018-2921-0

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