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Enhanced thermoelectric performance of p-type Mg3Sb2 by lithium doping and its tunability in an anionic framework

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Abstract

Mg3Sb2-based Zintl compounds are considered as promising thermoelectric materials due to their low thermal conductivity and high Seebeck coefficient. In this paper, we studied the thermoelectric properties of p-type lithium (Li)-doped Mg3Sb2 prepared by ball milling and hot pressing. A maximum ZT value ~ 0.6 at about 773 K was achieved in Mg2.975Li0.025Sb2, which was ascribed to the increased carrier concentration by Li doping. Mixed scattering mechanism is dominated at lower temperature, yielding higher carrier mobility. Isoelectronic substitution of Zn on the Mg site further increased the electrical conductivity by narrowing the band gap and decreased the lattice thermal conductivity by double substitution, contributing to an enhanced average ZT in Mg2.475Zn0.5Li0.025Sb2.

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Acknowledgements

This work was funded by the National Nature Science Foundation of China (11674078), Shenzhen Fundamental Research Projects (JCYJ20160427184825558), Startup Foundation for Advanced Talents from Shenzhen and Startup Foundation from Harbin Institute of Technology (Shenzhen).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, Guangdong, People’s Republic of China

    Chen Chen, Xiaofang Li, Shan Li, Xinyu Wang, Zongwei Zhang, Xingjun Liu & Qian Zhang

  2. School of Science, Harbin Institute of Technology, Shenzhen, 518055, Guangdong, People’s Republic of China

    Feng Cao

  3. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, China

    Jiehe Sui & Xingjun Liu

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  1. Chen Chen
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  2. Xiaofang Li
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  3. Shan Li
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Correspondence to Feng Cao, Xingjun Liu or Qian Zhang.

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Chen, C., Li, X., Li, S. et al. Enhanced thermoelectric performance of p-type Mg3Sb2 by lithium doping and its tunability in an anionic framework. J Mater Sci 53, 16001–16009 (2018). https://doi.org/10.1007/s10853-018-2555-2

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