Strain accommodation of <110>-normal direction-oriented grains in micro-shear bands of high-purity tantalum
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The <110>ND<uvw>(<110>//normal direction)(<110>ND) grains in micro-shear bands in high-purity tantalum were investigated using electron backscatter diffraction and X-ray line profile analysis. The generation of the <110>ND grains and their subdivision and rotation behaviors upon the subsequent deformation were characterized by multi-scale analysis methods based on information about the slip systems, misorientation angle/axes and stored energy. The obtained results show that in the transverse plane, <110>ND grains are oriented at angles of 15°–25° to the adjacent deformed matrices in the 60% rolled specimen, and at angles of 25°–35° in the 87% rolled specimen. The <110>ND grain provided strain accommodation during the shear deformation. Moreover, the energy of the <110>ND grains in the 87% rolled specimen is approximately three times larger than that in the 60% rolled specimen, indicating that the role of strain accommodation is enhanced with the increase in the micro-shear stress concentration in a local region in tantalum.
The present work was co-supported by the National Natural Science Foundation of China (Grants 51421001 and 51701032), the Major National Science and Technology Projects of China (No. 2011ZX02705), and the Chongqing Science and Technology Commission in China (CSTC, 2017jcyjAX0094).
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