A control of structural morphology via introducing insulating polymers in n-type P(NDI2OD-T2) semiconductor
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An issue for the morphology control of organic materials in active layer has still been in spotlight. Most research people have focused on the p-type semiconducting compounds; however, the studies on the n-type materials are rarely conducted. Thus, in this paper, we systematically controlled the morphology of the n-type semiconductor by introducing insulating polymers, PS and PAN. We analyzed the structural variation of the P(NDI2OD-T2):PS and P(NDI2OD-T2):PAN films depending on their blend ratios or thermal annealing treatment. From results, we could understand that the morphology of P(NDI2OD-T2) molecules was varied with random packing orientations. Through our study, we can believe that we suggest a new approach of the morphology control for the n-type semiconducting polymers, which will benefit to other materials.
This work was supported by a grant from the Center for Advanced Soft Electronics (2013M3A6A5073175) under the Global Frontier Research Program of the Ministry of Education, Science, and Technology, Korea. Y. J. Kim acknowledges support from the Maria Goeppert Mayer Named Fellowship at Argonne National Laboratory.