Journal of Materials Science

, Volume 53, Issue 13, pp 9627–9634 | Cite as

Effect of interface defects on the magnetoresistance in Bi4Ti3O12/(La, Sr)Mn1−xO3 heterostructures

  • Haoliang Huang
  • Xiaofang Zhai
  • Jianlin Wang
  • Dechao Meng
  • Yu Yun
  • Chao Ma
  • Xusheng Zheng
  • Lihui Wu
  • Haibin Pan
  • Zhengping Fu
  • Yalin Lu
Electronic materials


Heterostructure between layered ferroelectric oxide Bi4Ti3O12 and perovskite (La, Sr)Mn1−xO3 is highly interesting due to the need to explore new types of functional heterostructures. However, fabricating such heterostructures with high quality is challenging because of the non-isostructural crystalline symmetry of the two constituents. In this work, we constructed two different heterostructures, in which the Bi4Ti3O12 layers with precisely controlled thicknesses were deposited on insulating La0.7Sr0.3Mn0.81O3 and conducting La0.7Sr0.3MnO3 bottom layers, respectively. Results of cross section transmission electron microscopy identified rough interfaces between insulating (La, Sr)Mn1−xO3 and Bi4Ti3O12, while sharp interfaces between metallic (La, Sr)Mn1−xO3 and Bi4Ti3O12. In the former, levels of intermixing and charge leaking are strongly dependent on the thickness of the Bi4Ti3O12 capping layer, which induces a capping-layer-thickness-dependent magnetoresistance. These results demonstrated that the interfacial defect is a critical factor for designing functional heterostructures composed of layered oxide and perovskite oxide.



The authors acknowledge the RBS help from Prof. Donglai Feng and Dr. Rui Peng in Fudan University. This work was supported by the National Science Foundation of China (Grant Nos. 11504358 and 11574287), the National Natural Science Foundation of China (51627901), the National Key R&D Program of China (2016YFA0401004), the National Key R&D Program of China (2017YFA0402900) and the Hefei Science Center CAS (2015HSC-SRG052). The authors thank beamline BL08U1A and BL14 B1 of SSRF for providing the beam time.

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Conflict of interest

The authors declare that they have no conflict of interest.

Supplementary material

10853_2018_2256_MOESM1_ESM.docx (2.6 mb)
Supplementary material 1 (DOCX 2698 kb)


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Authors and Affiliations

  1. 1.National Synchrotron Radiation LaboratoryUniversity of Science and Technology of ChinaHefeiPeople’s Republic of China
  2. 2.Hefei National Laboratory for Physical Sciences at the MicroscaleUniversity of Science and Technology of ChinaHefeiPeople’s Republic of China
  3. 3.CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and EngineeringUniversity of Science and Technology of ChinaHefeiPeople’s Republic of China
  4. 4.Synergetic Innovation Center of Quantum Information and Quantum PhysicsUniversity of Science and Technology of ChinaHefeiPeople’s Republic of China
  5. 5.Microsystem and Terahertz Research CenterCAEPChengduPeople’s Republic of China
  6. 6.International Center for Quantum MaterialsPeking UniversityBeijingPeople’s Republic of China

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