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Enhanced performance of GaN-based LEDs via electroplating of a patterned copper layer on the backside

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Abstract

InGaN/GaN multi-quantum well light-emitting diodes (LEDs) are conventionally grown on a sapphire substrate due to a lack of compatible substrates with a high compressive strain. This is a result of the relatively large lattice, and thermal expansion coefficient mismatches between GaN and sapphire. The compressive strain is considered to be a major obstacle to further improve next-generation high-performance GaN-based LEDs. In this paper, we have designed, electroplated, and tested an efficient substrate using a patterned copper (Cu) layer on the backside of sapphire to relax the compressive strain in a GaN epilayer. The patterned Cu layer has a significant function in that it supports the GaN/sapphire LEDs with an external tensile stress. The external tensile stress is capable of compensating for the compressive strain in the GaN/sapphire LEDs by controlling the curvature of the wafer bowing. This patterned Cu layer, when applied to the GaN/sapphire LEDs, suppresses the compressive strain by up to 0.28 GPa. The GaN-based LEDs on this innovative and effective sapphire/Cu substrate offer improved optical and electrical performance.

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Acknowledgements

This study was financially supported by Chonnam National University (Grant Number 2016-2443).

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Beni-Suef University, Beni-Suef, 62511, Egypt

    Wael Z. Tawfik

  2. Department of Materials Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea

    Wael Z. Tawfik, Gil Yong Hyun, Seong Jea Lee & June Key Lee

  3. Optoelectronics Convergence Research Center, Chonnam National University, Gwangju, 61186, Republic of Korea

    Sang-Wan Ryu, Jun-Seok Ha & June Key Lee

Authors
  1. Wael Z. Tawfik
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  2. Gil Yong Hyun
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  3. Seong Jea Lee
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  4. Sang-Wan Ryu
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Correspondence to June Key Lee.

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Tawfik, W.Z., Hyun, G.Y., Lee, S.J. et al. Enhanced performance of GaN-based LEDs via electroplating of a patterned copper layer on the backside. J Mater Sci 53, 8878–8886 (2018). https://doi.org/10.1007/s10853-018-2177-8

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  • DOI: https://doi.org/10.1007/s10853-018-2177-8

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