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Self-powered photodetectors based on a ZnTe–TeO2 composite/Si heterojunction with ultra-broadband and high responsivity

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Abstract

A high-quality ZnTe and TeO2 (ZTO) composite is grown on an n-type silicon substrate, using a modified metal-assisted chemical vapor deposition method. Self-powered photodetector based on a ZnTe–TeO2 composite/Si heterojunction with ultra-broadband and high responsivity is obtained. The photosensitive detection performances of the ZTO composite/Si heterojunction photodetector are assessed using photoresponse spectrum. The photodetector shows ultra-broadband photoresponsivity from UV to NIR lights as ZnTe has a moderate, direct band gap of 2.26 eV, TeO2 has a wide band gap of 4.0 eV, and Si has a narrow band gap of 1.12 eV. Upon exposure to 850 nm light at a zero-bias voltage, the detector shows a high responsivity of 75 mA/W, detectivity of 1.4 × 1013 cm Hz1/2/W, fast response and recovery properties with response and recovery times both below 0.61 s, respectively. The working mechanism is illustrated from the band energy diagram of ZnTe/Si heterojunction and the high transmittance of TeO2.

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Acknowledgements

This work was financially supported by the National Science Foundation for Young Scientists of China (61702185) and the Key Research Projects of Henan High Education Institutions (18A520034). The authors thank Professor Guojia Fang of Wuhan University for his help and suggestions. The authors also thank the nanocenter of Wuhan University for XRD, XPS, EDS and SEM measurements.

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Correspondence to Yu Liu.

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Song, Z., Liu, Y., Wang, Q. et al. Self-powered photodetectors based on a ZnTe–TeO2 composite/Si heterojunction with ultra-broadband and high responsivity. J Mater Sci 53, 7562–7570 (2018). https://doi.org/10.1007/s10853-018-2093-y

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