Abstract
A high-quality ZnTe and TeO2 (ZTO) composite is grown on an n-type silicon substrate, using a modified metal-assisted chemical vapor deposition method. Self-powered photodetector based on a ZnTe–TeO2 composite/Si heterojunction with ultra-broadband and high responsivity is obtained. The photosensitive detection performances of the ZTO composite/Si heterojunction photodetector are assessed using photoresponse spectrum. The photodetector shows ultra-broadband photoresponsivity from UV to NIR lights as ZnTe has a moderate, direct band gap of 2.26 eV, TeO2 has a wide band gap of 4.0 eV, and Si has a narrow band gap of 1.12 eV. Upon exposure to 850 nm light at a zero-bias voltage, the detector shows a high responsivity of 75 mA/W, detectivity of 1.4 × 1013 cm Hz1/2/W, fast response and recovery properties with response and recovery times both below 0.61 s, respectively. The working mechanism is illustrated from the band energy diagram of ZnTe/Si heterojunction and the high transmittance of TeO2.
Similar content being viewed by others
References
Yang L, Wang S, Zeng Q, Zhang Z, Peng LM (2013) Carbon nanotube photoelectronic and photovoltaic devices and their applications in infrared detection. Small 9:1225–1236
Xu Z, Lin S, Li X, Zhang S, Wu Z, Xu W, Lu Y, Xu S (2016) Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity. Nano Energy 23:89–96
Boutramine A, Nafidi A, Barkissy D, Hannour A, Elanique A, Gouti TE (2016) Application of the transition semiconductor to semimetal in type II nanostructure superlattice for mid-infrared optoelectronic devices. Appl Phys A Mater 122:330
Naquin C, Lee M, Edwards H, Mathur G, Chatterjee T, Maggio K (2014) Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors. Appl Phys Lett 105:213507
Yusoff MZM, Hassan Z, Ahmed NM, Hassan HA, Abdullah MJ, Rashid M (2013) pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy. Mater Sci Semicond Process 16:1859–1864
Wang Z, Yu R, Wen X, Liu Y, Pan C, Wu W, Wang ZL (2014) Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect. ACS Nano 8:12866–12873
Avasthi S, Lee S, Loo YL, Sturm JC (2011) Role of majority and minority carrier barriers silicon/organic hybrid heterojunction solar cells. Adv Mater 23:5762–5766
Masuko K, Shigematsu M, Hashiguchi T et al (2014) Achievement of more than 25% conversion efficiency with crystalline silicon heterojunction solar cell. IEEE J Photovolt 4:1433–1435
Shaygan M, Davami K, Jin B, Gemming T, Leed JS, Meyyappan M (2016) Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio. J Mater Chem C 4:2040–2046
Olusola OI, Salim HI, Dharmadasa IM (2016) One-sided rectifying p–n junction diodes fabricated from n-CdS and p-ZnTe: Te semiconductors. Mater Res Express 3:95904
Hou L, Zhang Q, Ling L, Li CX, Chen L, Chen S (2013) Interfacial fabrication of single-crystalline ZnTe nanorods with high blue fluorescence. J Am Chem Soc 135:10618–10621
Shaygan M, Davami K, Jin B, Gemming T, Lee JS, Meyyappan M (2016) Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio. J Mater Chem C 4:2040–2046
Jiao S, Shen Q, Mora-Sero I, Wang J, Pan ZX, Zhao K, Kuga Y, Zhong XH, Bisquert J (2015) Band engineering in core/shell ZnTe/CdSe for photovoltage and efficiency enhancement in exciplex quantum dot sensitized solar cells. ACS Nano 9:908–915
Lee KS, Oh G, Chu D, Pak SW, Kim EK (2017) High power conversion efficiency of intermediate band photovoltaic solar cell based on Cr-doped ZnTe. Sol Energy Mater Sol C 170:27–32
Naseri M, Jalilian J, Reshak AH (2017) Electronic and optical properties of paratellurite TeO2 under pressure: a first-principles calculation. Optik 139:9–15
Vu K, Farahani S, Madden S (2015) 980 nm pumped erbium doped tellurium oxide planar rib waveguide laser and amplifier with gain in S, C and L band. Opt Express 23:747–755
Dewan N, Sreenivas K, Gupta (2007) Properties of crystalline γ-TeO2 thin film. J Cryst Growth 305:237–241
Liu X, Ji X, Liu M et al (2015) High-performance Ge quantum dot decorated graphene/zinc-oxide heterostructure infrared photodetector. ACS Appl Mater Interfaces 7:2452–2458
Kim DC, Jung BO, Lee JH, Cho HK, Lee JY, Lee JH (2011) Dramatically enhanced ultraviolet photosensing mechanism in a n-ZnO nanowires/i-MgO/n-Si structure with highly dense nanowires and ultrathin MgO layers. Nanotechnology 22:265506
Lu S, Qi J, Liu S, Zhang Z et al (2014) Piezotronic interface engineering on ZnO/Au-based Schottky junction for enhanced photoresponse of a flexible self-powered UV detector. ACS Appl Mater Interfaces 6:14116–14122
Sun HX, Lei TY, Tian W, Cao FR, Xiong J, Li L (2017) Self-powered, flexible, and solution-processable perovskite photodetector based on low-cost carbon cloth. Small 13:1701042
An Q, Meng X, Xiong K, Qiu Y (2017) Self-powered ZnS nanotubes/Ag nanowires MSM UV photodetector with high on/off ratio and fast response speed. Sci Rep 7:4885
Gao Z, Jin W, Zhou Y et al (2013) Self-powered flexible and transparent photovoltaic detectors based on CdSe nanobelt/graphene Schottky junctions. Nanoscale 5:5576–5581
Luo LB, Hu H, Wang XH, Lu R, Zou YF, Yu YQ, Liang FX (2015) A graphene/GaAs near-infrared photodetector enabled by interfacial passivation with fast response and high sensitivity. J Mater Chem C 3:4723–4728
Li Q, Wei L, Xie Y et al (2013) ZnO nanoneedle/H2O solid-liquid heterojunction-based self-powered ultraviolet detector. Nanoscale Res Lett 8:415
Hong Q, Cao Y, Xu J, Lu H, He J, Sun JL (2014) Self-powered ultrafast broadband photodetector based on p–n heterojunctions of CuO/Si nanowire array. ACS Appl Mater Interfaces 6:20887–20894
Rai SC, Wang K, Chen J, Marmon JK, Bhatt M, Wozny S, Zhang Y, Zhou W (2015) Enhanced broad band photodetection through piezo-phototronic effect in CdSe/ZnTe core/shell nanowire array. Adv Electron Mater 1:1400050
Acknowledgements
This work was financially supported by the National Science Foundation for Young Scientists of China (61702185) and the Key Research Projects of Henan High Education Institutions (18A520034). The authors thank Professor Guojia Fang of Wuhan University for his help and suggestions. The authors also thank the nanocenter of Wuhan University for XRD, XPS, EDS and SEM measurements.
Author information
Authors and Affiliations
Corresponding author
Electronic supplementary material
Below is the link to the electronic supplementary material.
Rights and permissions
About this article
Cite this article
Song, Z., Liu, Y., Wang, Q. et al. Self-powered photodetectors based on a ZnTe–TeO2 composite/Si heterojunction with ultra-broadband and high responsivity. J Mater Sci 53, 7562–7570 (2018). https://doi.org/10.1007/s10853-018-2093-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10853-018-2093-y