Journal of Materials Science

, Volume 53, Issue 9, pp 6339–6349 | Cite as

Investigation on electrical transport properties of nanocrystalline WO3 under high pressure

  • Yuqiang Li
  • Yang Gao
  • Cailong Liu
  • Yonghao Han
  • Qinglin Wang
  • Yan Li
  • Pingfan Ning
  • Pingjuan Niu
  • Yanzhang Ma
  • Chunxiao Gao
Ceramics
  • 36 Downloads

Abstract

The electrical transport properties of nanocrystalline tungsten trioxides (WO3) under high pressures have been investigated by various electrical measurements up to 36.5 GPa. The discontinuous changes in direct-current resistivity under high pressures result from two electronic phase transitions at 4.3 and 10.5 GPa and two structural phase transitions at 24.8 and 31.6 GPa. Hall-effect measurement shows that the nanocrystalline WO3 is n-type semiconductor within the whole investigated pressure range. The carrier concentration decreases monotonously with increasing pressure, but mobility increases first and then decreases at 10.4 GPa. Through alternate-current impedance measurement, it can be found that the variation of the ratio of grain boundary resistance to grain resistance synchronizes with that of the mobility under high pressures, indicating that the grain boundary plays more important role in the carrier transport process of nanocrystalline WO3. The discontinuous changes of resistance and relaxation frequency of grain and grain boundary also provide the evidence for electronic phase transitions.

Notes

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11674404, 11374121, 11404133, 11774126, 11604133, 61605145 and 61504093), the Open Project of State Key Laboratory of Superhard Materials (Jilin University) (Grant No. 201709) and the Tianjin Basic Science Foundation (Tianjin Polytechnic University) (Grant No. TJPUZK20170203), the Initial Foundation for Doctor Program of Tianjin Polytechnic University (Grant No. 030562) and Tianjin Research Program of Application Foundation and Advanced Technology (Grant Nos. 15JCQNJC41800 and 13JCYBJC37800).

Supplementary material

10853_2018_2001_MOESM1_ESM.doc (602 kb)
Supplementary material 1 (DOC 602 kb)

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Tianjin Key Laboratory of Advanced Electrical Engineering and Energy Technology, School of Electrical Engineering and AutomationTianjin Polytechnic UniversityTianjinPeople’s Republic of China
  2. 2.State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular PhysicsJilin UniversityChangchunPeople’s Republic of China
  3. 3.Department of Mechanical EngineeringTexas Tech UniversityLubbockUSA
  4. 4.Shandong Key Laboratory of Optical Communication Science and Technology, School of Physics Science and Information TechnologyLiaocheng UniversityLiaochengPeople’s Republic of China

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