Journal of Materials Science

, Volume 53, Issue 9, pp 6681–6697 | Cite as

Interfacial reactions of crystalline Ni and amorphous SiC thin films

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Abstract

The initial interfacial reactions of crystalline nickel and amorphous silicon carbide (Ni/a-SiC) thin films were investigated by means of X-ray diffraction (XRD) analysis, high-resolution transmission electron microscopy [(HR)TEM], Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Upon annealing at 500 °C, in the initial stage (< 5 min) of reactive interdiffusion, dissociation of a-SiC takes place, followed by rapid formation of a crystalline nickel silicide sublayer adjacent to the surface and precipitation of (amorphous) carbon, as a sublayer underneath the top silicide layer, as demonstrated by HRTEM. Diffusional transport of Ni through the a-C sublayer and its subsequent reaction with a-SiC leads to the formation of a second silicide layer and a second a-C layer underneath this second silicide layer, etc. As a result, the interfacial reactions lead to the formation of an alternating, nickel silicide/amorphous carbon (a-C), multilayered structure: silicide/a-C/silicide/a-C/silicide/a-SiC. The microstructural development was interpreted on the basis of the thermodynamics and kinetics governing the reaction.

Notes

Acknowledgements

We are indebted to Dr. Gunther Richter and Mr. Reinhart Völker for layer depositions, Mr. Wolf-Dieter Lang for the preparation of specimens for TEM analysis, Dr. Ewald Bischoff and Mr. Kersten Hahn for help in the TEM characterization, Dipl.-Ing. Bernhard Siegle and Dipl.-Ing. Peter Schützendübe for performing various AES measurements, and to Mrs. Michaela Wieland for the XPS measurements (all at the Max Planck Institute for Intelligent Systems (MPI-IS)). Dr. Z. Wang acknowledges supports by the National Natural Science Foundation of China (No. 51571148) and by the Thousand Talents Program for Distinguished Young Scholars of China.

Supplementary material

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Supplementary material 1 (PDF 1060 kb)

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Copyright information

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Authors and Affiliations

  1. 1.Max Planck Institute for Intelligent Systems (FORMERLY Max Planck Institute for Metals Research)StuttgartGermany
  2. 2.School of Materials Science and EngineeringTianjin UniversityTianjinChina
  3. 3.Institute for Materials ScienceUniversity of StuttgartStuttgartGermany

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