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Effect of temperature on graphene grown by chemical vapor deposition

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Abstract

Large-area single-crystal graphene films remain a challenge which settlement will permit to take full profit of the intrinsic properties of the material in electronic application. Toward this direction, in the present work we study the effect of temperature on the chemical vapor deposition growth of graphene over copper foil, in low pressure. Graphene growth commence with the crystallization of a supersaturated fraction of carbon-adatom species, while the nucleation density is the result of competition between the mobility of the carbon-adatom species and their desorption rate. We study the nuclei size and density distribution, growth rate and coverage rate to calculate the nucleation activation energy. In addition, we provide information considering the control of the intrinsic strain present in the graphene domains as a result of the ripple formation. We study the agreement, considering the ripple formation, between the theoretical model of thermal grooving and observation made by atomic force microscopy.

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Acknowledgements

One of the authors, S. C., was funded by the Greek State Scholarships Foundation (IKY). Both authors would like to thank the CCiT-UB for help with the structural and morphological characterization. This work was developed in the frame of the project 2014SGR984 of AGAUR from the Generalitat de Catalunya and the projects MAT2010-20468 and ENE2014-56109-C3-1-R of MICINN from Spanish Government.

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Authors and Affiliations

  1. FEMAN Group, IN2UB, Department of Applied Physics, Universitat de Barcelona, C/Martí i Franquès, 1, 08028, Barcelona, Spain

    Stefanos Chaitoglou & Enric Bertran

  2. Institute of Nanoscience and Nanotechnology (IN2UB), Universitat de Barcelona, Barcelona, Spain

    Stefanos Chaitoglou & Enric Bertran

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  1. Stefanos Chaitoglou
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  2. Enric Bertran
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Correspondence to Enric Bertran.

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Chaitoglou, S., Bertran, E. Effect of temperature on graphene grown by chemical vapor deposition. J Mater Sci 52, 8348–8356 (2017). https://doi.org/10.1007/s10853-017-1054-1

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  • DOI: https://doi.org/10.1007/s10853-017-1054-1

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