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Fabrication of Cu2SnS3 thin-film solar cells with oxide precursor by pulsed laser deposition

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Abstract

In this paper, Cu2SnS3 (CTS) thin film is fabricated through sulfurization of oxide precursor which is deposited by pulsed laser deposition with a mixed CuO/SnO2 target. XRD and Raman analyses indicate a pure monoclinic Cu2SnS3 phase has been obtained by sulfurization at temperature from 500 to 600 °C. A compact and smooth film with polycrystalline structure is observed through SEM result. In addition, the CTS films show excellent absorbance with the band gap around 0.91 eV estimated by UV–Vis, which is suitable for the absorption layer of solar cells. Final devices were fabricated with a SLG/Mo/CTS/CdS/i-ZnO/AZO/Al structure. Device performance is improved with the temperature increasing. The best efficiency of CTS-based solar cells is 0.69% with an open-circuit voltage of 144 mV and a short-circuit current density of 18.30 mA/cm−2.

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Acknowledgements

This work was supported by National Basic Research Program of China (973 Program)-2012CB922001 and the Fundamental Research Funds for the Central Universities, No. WK2060140022.

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Authors and Affiliations

  1. CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, China

    Yaguang Wang, Jianmin Li, Cong Xue, Yan Zhang, Guoshun Jiang, Weifeng Liu & Changfei Zhu

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  1. Yaguang Wang
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  2. Jianmin Li
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  3. Cong Xue
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  4. Yan Zhang
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  5. Guoshun Jiang
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  6. Weifeng Liu
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  7. Changfei Zhu
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Correspondence to Weifeng Liu or Changfei Zhu.

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Wang, Y., Li, J., Xue, C. et al. Fabrication of Cu2SnS3 thin-film solar cells with oxide precursor by pulsed laser deposition. J Mater Sci 52, 6225–6234 (2017). https://doi.org/10.1007/s10853-017-0856-5

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  • DOI: https://doi.org/10.1007/s10853-017-0856-5

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