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The influence of N and Bi on the band gap and sub-band interactions in a proposed material GaSb1−x−y N y Bi x /GaSb: a theoretical approach

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Abstract

The quaternary GaSb1−x−y N y Bi x , epitaxially grown over GaSb substrates, is proposed as a suitable material for optoelectronic devices in the mid-infrared region. Conduction band anti-crossing and valence band anti-crossing models are used to calculate the conduction band and valence band split-off energies and strain in the material as functions of Bi and N contents. Material compositions and band gap are calculated for various strain conditions, such as unstrained, tensile strain and compressive strain. Ratio of nitrogen concentration to Bi concentration for perfect lattice match with GaSb substrate is calculated as 0.14.

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Authors and Affiliations

  1. Department of Electronic Science, University of Calcutta, 92, A. P. C. Road, Kolkata, 700009, India

    Utsa Das & S. Dhar

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  1. Utsa Das
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  2. S. Dhar
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Correspondence to Utsa Das.

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Das, U., Dhar, S. The influence of N and Bi on the band gap and sub-band interactions in a proposed material GaSb1−x−y N y Bi x /GaSb: a theoretical approach. J Mater Sci 52, 5611–5616 (2017). https://doi.org/10.1007/s10853-017-0795-1

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  • DOI: https://doi.org/10.1007/s10853-017-0795-1

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