Abstract
We investigated the influence of MnO2 doping on the electric properties and thermal stability of (Ca0.4,Sr0.6)Bi4Ti4O15 high-temperature piezoelectric ceramics. The XRD patterns reveal that Curie temperature (T C) of the CSBTM-x ceramics slightly changes with increasing MnO2 content due to the slightly distorted lattice. The temperature dependence of inverse dielectric constant (1/ε r) reveals that the ceramics undergo a first-order phase transition. MnO2 doping with proper content (1, 2, 3 mol%) can significantly lower dielectric loss (tanδ) and enhance piezoelectric coefficient (d 33) of the CSBTM-x ceramics. The dependence of annealing temperature on d 33 indicates that the thermal stability becomes lower with increasing MnO2 content (x), and the CSBTM-x ceramics doped with MnO2 at low concentrations (x is less than 4) have good thermal stability. Optimal piezoelectric properties of the ceramics with 4 mol% MnO2 additive (CSBTM-4) are obtained: d 33 = 23.8 pC/N, k p = 0.075, Q m = 3221, and T C = 626 °C. The CSBTM-2 ceramics have excellent thermal stability with good dielectric and piezoelectric properties at 300 °C: d 33 = 20.8 pC/N, (d 33T − d 33RT )/d 33RT = −0.95 %, and tanδ = 0.00475 at 1 MHz. The dielectric and piezoelectric properties as a function of MnO2 content (x) indicate that the introduction of Mn ions into the CSBTM-x ceramics produces both “soft” and “hard” doping effects. The d 33 of CSBTM-0, 2, 4, and 8 ceramics slightly decreases (less than 2 %) when the annealing temperature is below about half of the T C (300 °C), which is in accordance with the fact that the operating temperature of piezoelectric ceramics in sensors or detectors seldom exceeds about half of T C of the ceramics.
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This work was supported by the National Natural Science Foundation of China (No. 51332003 and 61201064).
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Nie, R., Chen, Q., Liu, H. et al. MnO2-doped (Ca0.4,Sr0.6)Bi4Ti4O15 high-temperature piezoelectric ceramics with improved thermal stability. J Mater Sci 51, 5104–5112 (2016). https://doi.org/10.1007/s10853-016-9813-y
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DOI: https://doi.org/10.1007/s10853-016-9813-y