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Growth of large-area, few-layer graphene by femtosecond pulsed laser deposition with double-layer Ni catalyst

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Abstract

We demonstrated a simple method of fabricating large-area, few-layer graphene that involves performing femtosecond pulsed laser deposition at a relatively low temperature of 500 °C and a high pressure of 10\(^{-5}\) Torr using a double-layer Ni catalyst. The average thickness of the resulting graphene films was less than 3 nm, their average area was more than 1 cm\(^{2}\), and their electrical resistivity was only 0.44 \({\rm m}\Omega .{\rm cm}\). The laser deposition process was also conducted at different laser energies, and it was observed that the quality of the few-layer graphene could be improved using a double-layer catalyst at a higher laser energy. The ejection of C clusters by breaking the C–C bonds of the HOPG through multi-photon ionization can explain the observed graphene formation characteristics. The insights may facilitate the controllable synthesis of large-area, mono-layer graphene and promote the commercialize application of the graphene.

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Acknowledgements

We gratefully acknowledge the support for this work from the National Natural Science Foundation of China (Grant No. 51275012)

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Authors and Affiliations

  1. Strong-field and Ultrafast Photonics Lab, Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, China

    Xiangming Dong, Shibing Liu, Haiying Song & Peng Gu

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  1. Xiangming Dong
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  2. Shibing Liu
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  3. Haiying Song
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  4. Peng Gu
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Correspondence to Xiangming Dong.

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Dong, X., Liu, S., Song, H. et al. Growth of large-area, few-layer graphene by femtosecond pulsed laser deposition with double-layer Ni catalyst. J Mater Sci 52, 2060–2065 (2017). https://doi.org/10.1007/s10853-016-0494-3

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  • DOI: https://doi.org/10.1007/s10853-016-0494-3

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