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Journal of Materials Science

, Volume 51, Issue 17, pp 8168–8176 | Cite as

Control of octahedral rotations via octahedral connectivity in an epitaxially strained [1 u.c.//4 u.c.] LaNiO3/LaGaO3 superlattice

  • H. Y. Qi
  • M. K. Kinyanjui
  • X. D. Chen
  • J. Biskupek
  • D. Geiger
  • E. Benckiser
  • H.-U. Habermeier
  • B. Keimer
  • U. Kaiser
Original Paper

Abstract

For ABO3 perovskites, the magnetic and electronic properties couple strongly to the BO6 octahedral rotations and distortions. Therefore, precise control of the octahedral rotations and distortions via epitaxial strain and interfacial octahedral connectivity has become the key for engineering novel functionalities in ABO3 heterostructures and superlattices. In this paper, we investigated the local octahedral rotations in a [(1 unit cell (u.c.)//4 u.c.) × 13] LaNiO3/LaGaO3 superlattice grown on a (001) SrTiO3 substrate. By using aberration-corrected high-resolution transmission electron microscopy, we found that the octahedral rotations of NiO6 adopted the same [100] and [010] rotational magnitudes as the neighboring GaO6 till the surface of the superlattice. Our results indicate that in LaNiO3-based superlattices, the NiO6 rotations can be precisely controlled via interfacial octahedral connectivity when the thickness of the LaNiO3 layer is only 1 unit cell.

Keywords

Oxygen Anion LaNiO3 Convergent Beam Electron Diffraction Rotation Pattern NiO2 Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

We are grateful to Sabine Grözinger for cross-section TEM sample preparation. We gratefully acknowledge the financial support by the German Research Foundation (DFG) and the Ministry of Science, Research and the Arts (MWK) of the state Baden-Württemberg within the DFG: KA 1295/17-1 project.

Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest.

Supplementary material

10853_2016_92_MOESM1_ESM.docx (2.2 mb)
Supplementary material 1 (DOCX 2243 kb)

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Copyright information

© Springer Science+Business Media New York 2016

Authors and Affiliations

  • H. Y. Qi
    • 1
  • M. K. Kinyanjui
    • 1
  • X. D. Chen
    • 1
  • J. Biskupek
    • 1
  • D. Geiger
    • 1
  • E. Benckiser
    • 2
  • H.-U. Habermeier
    • 2
  • B. Keimer
    • 2
  • U. Kaiser
    • 1
  1. 1.Central Facility of Electron Microscopy, Electron Microscopy Group of Materials ScienceUniversity of UlmUlmGermany
  2. 2.Max Planck Institute for Solid State ResearchStuttgartGermany

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