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Journal of Materials Science

, Volume 50, Issue 17, pp 5641–5673 | Cite as

Electric double-layer transistors: a review of recent progress

  • Haiwei Du
  • Xi Lin
  • Zhemi Xu
  • Dewei Chu
Review

Abstract

With the miniaturization of electronic devices, it is essential to achieve higher carrier density and lower operation voltage in field-effect transistors (FETs). However, this is a great challenge in conventional FETs owing to the low capacitance and electric breakdown of gate dielectrics. Recently, electric double-layer technology with ultra-high charge-carrier accumulation at the semiconductor channel/electrolyte interface has been creatively introduced into transistors to overcome this problem. Some interesting electrical transport characteristics such as superconductivity, metal–insulator transition, and tunable thermoelectric behavior have been modulated both theoretically and experimentally in electric double-layer transistors (EDLTs) with various semiconductor channel layers and electrolyte materials. The present article is a review of the recent progress in the EDLTs and the impacts of EDLT technology on modulating the charge transportation of various electronics.

Keywords

Ionic Liquid Polymer Electrolyte MoS2 Electric Double Layer Gate Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgements

This work was funded by the Australian Research Council Project (Grant No. FT140100032). One of the authors (H. Du) appreciates the China Scholarship Council (CSC) for financial support (No. 201406410060).

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© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.School of Materials Science and EngineeringUniversity of New South WalesSydneyAustralia

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