Abstract
When elemental sulfur was used to hyperdope crystalline silicon to a supersaturated density of ~1020 cm−3, it was found to enhance the sub-bandgap light absorptance of the silicon substrate from 0 up to 70 % when combined with the antireflection properties of the surface dome structures that were formed by surface texturing. These textured sulfur-hyperdoped silicon samples were then thermally annealed at various temperatures, and the effects of the annealing on each sample’s optical and electrical properties were investigated. In the silicon sub-bandgap wavelength range, the absorptance of the textured hyperdoped silicon was attenuated more slowly than that of a non-textured sample, and the modulation of its reflectance and transmittance properties was attributed to the density damping of the optically absorbing state. In addition, the optically absorbing state can release more electrons than the optically non-absorbing state, and the former state also has a stronger ability to scatter electrons than the latter.
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References
Wu C, Crouch CH, Zhao L et al (2001) Near-unity below-band-gap absorption by microstructured silicon. Appl Phys Lett 78:1850–1852
Kim TG, Warrender JM, Aziz MJ (2006) Strong sub-band-gap infrared absorption in silicon supersaturated with sulfur. Appl Phys Lett 88:241902
Iyengar VV, Nayak BK, Gupta MC (2010) Optical properties of silicon light trapping structures for photovoltaics. Sol Energy Mater Sol Cells 94:2251–2257
Tabbal M, Kim T, Warrender JM et al (2007) Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting. J Vac Sci Technol, B 25:1847–1852
Sánchez K, Aguilera I, Palacios P, Wahnón P (2010) Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al). Phys Rev B 82:165201
He HL, Chen CS, Liu SH (2012) Microstructured silicon with two impurity bands for solar cells. J Appl Phys 111:043102
Carey JE, Crouch CH, Shen M, Mazur E (2005) Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes. Opt Lett 30:1773–1775
Said AJ, Recht D, Sullivan JT et al (2011) Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes. Appl Phys Lett 99:073503
Wang XY, Huang YG, Liu DW et al (2013) High response in a tellurium-supersaturated silicon photodiode. Chin Phys Lett 30:036101
Crouch CH, Carey JE, Warrender JM et al (2004) Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon. Appl Phys Lett 84:1850–1852
Zorba V, Boukos N, Zergioti I, Fotakis C (2008) Ultraviolet femtosecond, picosecond and nanosecond laser microstructuring of silicon: structural and optical properties. Appl Opt 47:1846–1850
Sheehy MA, Winston L, Carey JE, Friend CM, Mazur E (2005) Role of the background gas in the morphology and optical properties of laser-microstructured silicon. Chem Mater 17:3582–3586
Sheehy MA, Tull BR, Friend CM, Mazur E (2007) Chalcogen doping of silicon via intense femtosecond-laser irradiation. Mater Sci Eng, B 137:289–294
Crishal JM, Harrington AL (1962) A selective etch for elemental silicon. Electrochem Soc Ext Abstr 109:89
Green MA (1999) Two new efficient crystalline silicon light-trapping texture. Prog Photovolt 7:317–320
Vazsonyi E, Clercq KD, Einhaus R et al (1999) Improved anisotropic etching process for industrial texturing of silicon solar cells. Sol Energy Mater Sol Cells 57:179–188
SRIM software. www.srim.org
Zanatta AR, Chambouleyron I (1996) Absorption edge, band tails, and disorder of amorphous semiconductors. Phys Rev B 53:3833–3836
Narayan J, White CW, Aziz MJ, Stritzker B, Walthuis A (1985) Pulsed excimer (KrF) laser melting of amorphous and crystalline silicon layers. J Appl Phys 57:564–567
Bob BP, Kohno A, Charnvanichborikarn S et al (2010) Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting. J Appl Phys 107:123506
Pan SH, Recht D, Charnvanichborikarn S, Williams JS, Aziz MJ (2011) Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens. Appl Phys Lett 98:121913
Umezu I, Warrender JM, Charnvanichborikarn S et al (2013) Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens. J Appl Phys 113:213501
Ertekin E, Winkler MT, Recht D et al (2012) Insulator-to-metal transition in selenium-hyperdoped silicon: observation and origin. Phys Rev Lett 108:026401
Pankove JI (1971) Optical processes in semiconductors. Prentice-Hall Inc., New Jersey, p p391
Newman BK, Ertekin E, Sullivan JT et al (2013) Extended X-ray absorption fine structure spectroscopy of selenium-hyperdoped silicon. J Appl Phys 114:133507
Simmons CB, Akey AJ, Krich JJ et al (2013) Deactivation of metastable single-crystal silicon hyperdoped with sulfur. J Appl Phys 114:243514
Shao H, Li Y, Zhang J et al (2012) Physical mechanisms for the unique optical properties of chalcogen-hyperdoped silicon. Europhys Lett 99:46005
Sze SM (1981) Physics of Semiconductor Devices. Wiley, New York, p p28
Newman BK, Sher MJ, Mazur E, Buonassisi T (2011) Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon. Appl Phys Lett 98:251905
Acknowledgements
KFW would like to thank Hezhu Shao of the Ningbo Institute of Industrial Technology, Chinese Academy of Sciences, for helpful discussions, and Professor Michael J. Aziz of Harvard University for his flat hyperdoped silicon sample. This work was supported by the NSFC (Grant No. 61204002), and by the National Basic Research Program of China (Grant No. 2012CB934200).
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Wang, KF., Liu, P., Qu, S. et al. Optical and electrical properties of textured sulfur-hyperdoped silicon: a thermal annealing study. J Mater Sci 50, 3391–3398 (2015). https://doi.org/10.1007/s10853-015-8895-2
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DOI: https://doi.org/10.1007/s10853-015-8895-2