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Study on the temperature dependence of the OH absorption band in Hf-doped LiNbO3 crystals

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Abstract

We study in this paper the temperature dependence of the OH absorption band in LiNbO3 crystals with different Hf-doping concentrations. It is found that the shoulder at 3500 cm−1 appears in the doping level of 2.6 mol%, becomes more evident at 3 and 4 mol%, and then gradually faints when the doping concentration increases. This result is explained by the non-monotonic change of Nb vacancy density in the three stages of the defect evolution involved in the Hf incorporation of LN lattice. Moreover, the absorption difference analysis of the OH bands is consistent with this explanation and reveals that the mobility of H+ ions may be reduced by the strong trapping of the highly electronegative Nb vacancies.

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Acknowledgements

We thank the referees for their valuable comments. This work is partly supported by NSFC (No. 61108060), Excellent Young Researcher Foundation of HEBUT (No. 2011001) and of HeBei Education Dep. (No.YQ2013029), Key Project of Chinese Ministry of Education (No. 212016), Project sponsored by SRF for ROCS of SEM (2012), Hebei NSF (No. F2013202153), and Hebei Foundation for the introduction of oversea scholars (No. CG2013003002).

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Correspondence to Wenbo Yan.

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Shen, X., Yan, W., Jing, J. et al. Study on the temperature dependence of the OH absorption band in Hf-doped LiNbO3 crystals. J Mater Sci 49, 3775–3779 (2014). https://doi.org/10.1007/s10853-014-8088-4

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