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Effect of copper content on optostructural, morphological and photoelectrochemical properties of MoBi2−x Cu x Se4 thin films

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Abstract

In the present investigation we have reported a facile chemical route for the deposition of MoBi2−x Cu x Se4 (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) thin films at room temperature by using a simple and self-organised arrested precipitation technique. The deposited samples were characterised for their structural, morphological, optical and photoelectrochemical properties. X-ray diffraction patterns revealed that, undoped MoBi2Se5 shows a rhombohedral crystal structure, while mixed rhombohedral and orthorhombic crystal structures were observed with shifting of diffraction peaks after copper doping. The scanning electron microscopy and transmission electron microscopy images revealed that the surface morphology was improved with copper content. Compositional analysis of all samples was carried out by using energy dispersive X-ray spectroscopy. The direct band gap energy of all the samples estimated from absorbance spectra varies from 1.26 to 1.60 eV. The photoelectrochemical properties of all samples were studied in I−/I3 − redox electrolyte which demonstrated that the electrical conductivity was transformed from n-type to p-type after copper doping and photoelectrochemical response of p-type MoBi2−x Cu x Se4 thin film electrode was improved with increasing copper content. The mechanism of change in the type of electrical conductivity and augmentation in photoelectrochemical response after copper doping are discussed.

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Acknowledgements

Authors are very much thankful to the Department of Science and Technology (DST) and University Grant Commission (UGC), New Delhi for providing financial assistance. This work was supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (20090094055). This work is partially supported by the Human Resource Development of the Korea Institute of Energy technology Evaluation and Planning (KETEP) grant funded by the Korea Government Ministry of knowledge Economy (No. 20124010203180).

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Authors and Affiliations

  1. Materials Research Laboratory, Department of Chemistry, Shivaji University, Kolhapur, 416004, India

    Suvarta D. Kharade, Nita B. Pawar & Popatrao N. Bhosale

  2. Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur, 416004, India

    Sawanta S. Mali & Pramod S. Patil

  3. School of Applied Chemical Engineering, Chonnam National University, Gwangju, 500-757, South Korea

    Sawanta S. Mali & Chang K. Hong

  4. Department of Materials Science and Engineering, Chonnam National University, Gwangju, 500-757, South Korea

    Pramod S. Patil, Myeng Gil Gang & Jin-Hyeok Kim

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  1. Suvarta D. Kharade
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  2. Nita B. Pawar
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  3. Sawanta S. Mali
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  8. Popatrao N. Bhosale
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Correspondence to Popatrao N. Bhosale.

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Kharade, S.D., Pawar, N.B., Mali, S.S. et al. Effect of copper content on optostructural, morphological and photoelectrochemical properties of MoBi2−x Cu x Se4 thin films. J Mater Sci 48, 7300–7311 (2013). https://doi.org/10.1007/s10853-013-7550-z

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  • DOI: https://doi.org/10.1007/s10853-013-7550-z

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