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Thermoelectric properties of Ho-doped Bi0.88Sb0.12

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Abstract

The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.

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Acknowledgements

The authors gratefully acknowledge M. S. Dresselhaus, J. C. Lashley and P. S. Riseborough for their fruitful discussions and careful reading of the manuscript as well as G. McMahon for his assistance. This study is funded by the Air Force MURI program under contract FA9550-10-1-0533.

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Authors and Affiliations

  1. Department of Physics, Boston College, Chestnut Hill, MA, 02467, USA

    K. C. Lukas, G. Joshi, Z. F. Ren & C. P. Opeil

  2. Los Alamos National Laboratory, Los Alamos, NM, 87545, USA

    K. Modic

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  1. K. C. Lukas
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  2. G. Joshi
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  3. K. Modic
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Correspondence to K. C. Lukas.

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Lukas, K.C., Joshi, G., Modic, K. et al. Thermoelectric properties of Ho-doped Bi0.88Sb0.12 . J Mater Sci 47, 5729–5734 (2012). https://doi.org/10.1007/s10853-012-6463-6

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  • DOI: https://doi.org/10.1007/s10853-012-6463-6

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