Growth behavior of compounds due to solid-state reactive diffusion between Cu and Al

Abstract

To examine experimentally the kinetics of the reactive diffusion between solid-Cu and solid-Al, sandwich Al/Cu/Al diffusion couples were prepared by a diffusion-bonding technique and then isothermally annealed in the temperature range of T = 693–753 K for various times up to 336 h. Owing to annealing, compound layers of the γ ₁, δ, ζ ₂, η ₂, and θ phases are formed between the Cu and Al specimens. The γ ₁, δ, ζ ₂, η ₂, and θ phases are the only stable compounds at T = 693–753 K in the binary Cu–Al system. At each annealing time, the thickness of the θ phase is much greater than those of the δ, ζ ₂, and η ₂ phases but smaller than that of the γ ₁ phase. Hence, the overall growth of the compound layers is governed by the γ ₁ and θ phases. The mean thickness of each compound layer is proportional to a power function of the annealing time. For the γ ₁ phase, the exponent m of the power function is 0.5 at T = 753 K. Such a relationship is called a parabolic relationship. As the annealing temperature T decreases, however, m gradually increases and then reaches to 0.66 at T = 693 K. On the other hand, for the θ phase, m is close to 0.5 at T = 723–753 K and becomes 0.42 at T = 693 K. In the γ ₁ and θ phases, grain growth occurs at T = 693–753 K. Thus, the layer growth of the θ phase is controlled by volume diffusion at T = 723–753 K but partially by boundary diffusion at T = 693 K. On the other hand, for the γ ₁ phase, volume diffusion is the rate-controlling process of the layer growth at T = 753 K, but interface reaction contributes to the rate-controlling process at T = 693–723 K. Consequently, the rate-controlling process varies depending on the annealing temperature in a different manner for each compound.