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Low-temperature microwave sintering of TiN–SiC nanocomposites

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Abstract

Densification kinetics study during microwave sintering of titanium nitride-based nanocomposite has been conducted. A series of TiN–SiC compositions with 1, 3, 5 wt% of silicon carbide were microwave sintered at relatively low sintering temperatures (900–1,300 °C) for 0–30 min. The SiC content influenced on heating uniformity and final density and grain-size achieved. Densification process during microwave sintering obeyed the mechanism of grain-boundary diffusion with activation energy of 235 kJ mol−1. Microwave sintering resulted in fine microstructure (~300 nm) and hence high values of micro hardness (~20 GPa).

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Acknowledgements

This study was supported by STCU #4259. The authors thank Dr. M. Gadzira (IPMS NASU) for providing nanocrystalline SiC powder used in the present investigation.

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  1. Frantsevich Institute for Problems in Material Science, 3 Krzhizhanovsky str., 03680, Kyiv-142, Ukraine

    Dmytro Demirskyi & Andrey Ragulya

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  1. Dmytro Demirskyi
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  2. Andrey Ragulya
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Correspondence to Dmytro Demirskyi.

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Demirskyi, D., Ragulya, A. Low-temperature microwave sintering of TiN–SiC nanocomposites. J Mater Sci 47, 3741–3745 (2012). https://doi.org/10.1007/s10853-011-6224-y

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  • DOI: https://doi.org/10.1007/s10853-011-6224-y

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