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Fabrication conditions and transformation behavior of epitaxial Ni–Mn–Ga thin films

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Abstract

Epitaxial Ni–Mn–Ga films have been grown onto heated substrates by sputtering. Their chemical composition depends on the sputtering argon pressure. Representative epitaxial films of Ni52.3Mn26.8Ga20.9, 0.5 μm-thick, transform martensitically at about 120 °C, accompanied by sharp changes in the lattice parameter and resistivity, and orders ferromagnetically below 98°. The observed high transformation temperature, orthorhombic martensitic structure, twinning mode and film morphology, indicate a potential multifunctional behavior of the film, such as high-temperature shape-memory effect and magnetic field actuation.

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Acknowledgements

The financial support from the Department of Education, Basque Government (Project ETORTEK No. IE10-272), and the Spanish Ministry of Science and Innovations (Project No. MAT2008 06542-C04-02) is acknowledged. The discussions with Prof. G. Jakob about twinning crystallography are very much appreciated. Authors are very grateful to M. Pini and G.Carcano for technical support.

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Authors and Affiliations

  1. Departamento de Electricidad y Electrónica, Universidad del País Vasco, P.O. Box 644, 48080, Bilbao, Spain

    I. R. Aseguinolaza, A. V. Svalov, V. A. Chernenko & J. M. Barandiarán

  2. SGiker, Vicerrectorado de Investigación UPV/EHU, Sarriena s/n, 48940, Leioa, Spain

    I. Orue

  3. Ikerbasque, Basque Foundation for Science, 48011, Bilbao, Spain

    V. A. Chernenko

  4. CNR-IENI, 23900, Lecco, Italy

    S. Besseghini

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  1. I. R. Aseguinolaza
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  2. I. Orue
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  3. A. V. Svalov
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  4. V. A. Chernenko
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  5. S. Besseghini
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  6. J. M. Barandiarán
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Correspondence to V. A. Chernenko.

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Aseguinolaza, I.R., Orue, I., Svalov, A.V. et al. Fabrication conditions and transformation behavior of epitaxial Ni–Mn–Ga thin films. J Mater Sci 47, 3658–3662 (2012). https://doi.org/10.1007/s10853-011-6212-2

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  • DOI: https://doi.org/10.1007/s10853-011-6212-2

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