Abstract
Al:ZnO (AZO) films were deposited on glass substrate with inborn surface texture by magnetron sputtering at a power density as high as 7 W/cm2. The sputtering parameters, such as argon working pressure and substrate temperature were varied from 1.0 to 6.0 Pa and from room temperature to 500 °C, respectively. All the films exhibited perfect (002) orientations with very weak (004) peaks measured by X-ray diffraction. A linear relationship between the growth rate of AZO film and working pressure was found. The AZO film with best electrical properties of all films obtained at room temperature was deposited at working pressure of 2.0 Pa. And the root-mean-square roughness tested by atomic force microscopy was 37.50 nm, which indicated that surface texture was successfully fabricated without further etching process. For higher substrate temperature a decrease in the resistivity was observed due to an increase in the mobility and the carrier concentration. Resistivity low as 9.044 × 10−4 ohm/cm was obtained at 500 °C and 2.0 Pa, the corresponding mobility and carrier concentration were 20.45 m2/Vs and 3.379 × 1020/cm3, respectively. The grain size and the surface texture size tested by scanning electron microscopy also peaked at 500 °C. All the films showed a relatively high transmittance about 80%.
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Elm MT, Henning T, Klar PJ, Szyszka B (2008) Appl Phys Lett 93:232101
Riedl T, Meyer J, Gorrn P, Hamwi S, Johannes HH, Kowalsky W (2008) Appl Phys Lett 93:073308
Zhao DX, Guo Z, Zhang H et al (2010) Appl Phys Lett 97:173508
Gupta SK, Joshi A, Kaur M (2010) J Chem Sci 122:57
Jung SJ, Han YH, Koo BM, Lee JJ, Joo JH (2005) Thin Solid Films 475:275
Wen LS, Chen M, Pei ZL, Sun C, Gong J, Huang RF (2001) Mater Sci Eng B 85:212
Li L, Shan CX, Li BH et al (2010) J Electron Mater 39:2467
Kluth O, Rech B, Houben L et al (1999) Thin Solid Films 351:247
Calnan S, Hupkes J, Rech B, Siekmann H, Tiwari A (2008) Thin Solid Films 516:1242
Loffler J, Groenen R, Linden JL, van de Sanden MCM, Schropp REI (2001) Thin Solid Films 392:315
Krasnov A (2010) Sol Energy Mater Sol Cells 94:1648
Berginski M, Huepkes J, Reetz W, Rech B, Wuttig M (2008) Thin Solid Films 516:5836
Lin YC, Yen WT, Ke JH (2010) Appl Surf Sci 257:960
Lin YC, Jian YC, Jiang JH (2008) Appl Surf Sci 254:2671
Park KC, Ma DY, Kim KH (1997) Thin Solid Films 305:201
Lee J-M, Chang K-M, Kim K-K, Choi W-K, Park S-J (2001) J Electrochem Soc 148:G1
Goyal DJ, Agashe C, Takwale MG, Marathe BR, Bhide VG (1992) J Mater Sci 27:4705. doi:10.1007/BF01166010
Ma TY, Lee SC (2000) J Mater Sci Mater Electron 11:305
Wang H, Xu MH, Xu JW, Yang L, Zhou SJ (2010) J Mater Sci Mater Electron 21:145
Kuo SY, Liu KC, Lai FI et al (2010) Microelectron Reliab 50:730
Wolden CA, Barnes TM, Leaf J, Fry C (2005) J Cryst Growth 274:412
Duclere JR, O’Haire R, Meaney A et al (2005) J Mater Sci Mater Electron 16:421
Carcia PF, McLean RS, Reilly MH, Nunes G (2003) Appl Phys Lett 82:1117
Ondo-Ndong R, Ferblantier G, Al Kalfioui M, Boyer A, Foucaran A (2003) J Cryst Growth 255:130
Ozgur U, Teke A, Liu C, Cho SJ, Morkoc H, Everitt HO (2004) Appl Phys Lett 84:3223
Zeman M, Dagamseh AMK, Vet B, Tichelaar FD, Sutta P (2008) Thin Solid Films 516:7844
Kluth O, Schope G, Hupkes J, Agashe C, Muller J, Rech B (2003) Thin Solid Films 442:80
Kim SG, Lee JB, Kim HJ et al (2003) Thin Solid Films 435:179
Tohsophon T, Huepkes J, Siekmann H, Rech B, Schultheis M, Sirikulrat N (2008) Thin Solid Films 516:4628
Wu ZY, Yang WF, Liu ZG, Pang AS, Tu YL, Feng ZC (2010) Thin Solid Films 519:31
Li W, Sun Y, Wang YX, Cai HK, Liu FF, He Q (2007) Sol Energy Mater Sol Cells 91:659
Hupkes J, Rech B, Kluth O et al (2006) Sol Energy Mater Sol Cells 90:3054
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This study was supported by the National Natural Science Foundation of China under Grand No. 61106065 and the Fundamental Research Funds for the Central Universities under Grand No. 2011YYL006.
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Li, W., Hao, H. Effect of temperature on the properties of Al:ZnO films deposited by magnetron sputtering with inborn surface texture. J Mater Sci 47, 3516–3521 (2012). https://doi.org/10.1007/s10853-011-6196-y
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DOI: https://doi.org/10.1007/s10853-011-6196-y