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Comments on the article: “Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure” by H. M. Tawancy (Journal of Materials Science DOI: 10.1007/s10853-011-5728-9)

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Acknowledgements

The authors wish to thank the Editor-in-chief of the Journal of Materials Science for giving them the opportunity to express their point of view.

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Authors and Affiliations

  1. Université Paris Sud, Institut d’Electronique Fondamentale (UMR8622), Orsay, 91405, France

    D. Bouchier

  2. CNRS, 91405, Orsay, France

    D. Bouchier

  3. Department of Materials Science Engineering, North Carolina State University Raleigh, Raleigh, NC, 27606, USA

    O. Aboelfotoh

Authors
  1. D. Bouchier
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  2. O. Aboelfotoh
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Correspondence to D. Bouchier.

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Bouchier, D., Aboelfotoh, O. Comments on the article: “Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure” by H. M. Tawancy (Journal of Materials Science DOI: 10.1007/s10853-011-5728-9). J Mater Sci 47, 100–103 (2012). https://doi.org/10.1007/s10853-011-6031-5

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  • DOI: https://doi.org/10.1007/s10853-011-6031-5

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