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Microstructural properties of electrochemically synthesized ZnSe thin films

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Abstract

In this study, we report the electrosynthesis of zinc selenide (ZnSe) thin films on indium-doped tin oxide-coated glass substrates. The deposited ZnSe thin films have been characterized for structural (X-ray diffraction), surface morphological (scanning electron microscopy), compositional (energy dispersive analysis by X-rays), photo luminescence property, and optical absorption analysis. Formation of cubic structure with preferential orientation along the (111) plane was confirmed from structural analysis. In addition, the influence of the deposition potential on the microstructural properties of ZnSe is plausibly explained. The optical properties of ZnSe thin films are estimated using the transmission spectrum in the range of 400–1200 nm. The optical band gap energy of ZnSe thin films was found to be in the range between 2.52 and 2.61 eV. Photoluminescence spectra were observed at blue shifted band edge peak. The morphological studies depict that the spherical and cuboid shaped grains are distributed evenly over the entire surface of the film. The sizes of the grains are found to be in the range between 150 and 200 nm. The ZnSe thin film stoichiometric composition was observed at optimized deposition condition.

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Authors and Affiliations

  1. Department of Physics, Alagappa University, Karaikudi, 630 003, India

    T. Mahalingam & V. Dhanasekaran

  2. Department of Physics, Sree Sevugan Annamalai College, Devakottai, 630 303, India

    R. Chandramohan

  3. Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul, 100-715, Republic of Korea

    Jin-Koo Rhee

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  1. T. Mahalingam
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  2. V. Dhanasekaran
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  3. R. Chandramohan
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  4. Jin-Koo Rhee
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Correspondence to T. Mahalingam.

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Mahalingam, T., Dhanasekaran, V., Chandramohan, R. et al. Microstructural properties of electrochemically synthesized ZnSe thin films. J Mater Sci 47, 1950–1957 (2012). https://doi.org/10.1007/s10853-011-5989-3

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  • DOI: https://doi.org/10.1007/s10853-011-5989-3

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